A nitride based polarization-engineered photocathode for water splitting without a p-type semiconductor

Polarization-engineered GaN/InGaN/GaN tunnel diodes

(2010) Sriram Krishnamoorthy et al.   APPLIED PHYSICS LETTERS

Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells

(2010) K. Aryal et al.   APPLIED PHYSICS LETTERS

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Intersubband Transition at 1.52 µm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy

(2009) Hassanet Sodabanlu et al.   Applied Physics Express

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures

(2009) John Simon et al.   PHYSICAL REVIEW LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS