☆ 4.5 Article

Threshold voltage control by gate electrode in Ga-Sn-Zn-O thin-film transistors for logic inverter application

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2011)

期刊

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS

卷 5, 期 5-6, 页码 211-213

出版社

WILEY-BLACKWELL

DOI: 10.1002/pssr.201105158

关键词

inverters; work function; amorphous oxides; thin-film transistors; TFT; GTZO

类别

Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

资金

NRF [2010-0000808]
BK21 Project
LOTTE

向作者/读者索取更多资源

Protocol

Reagent

摘要

We report on the fabrication of Ga-Sn-Zn-O thin-film transistors (GTZO-TFTs) and their inverter application. For the most stable and highly-performing GTZO-TFT, an optimal oxygen pressure condition was extracted out during cosputter deposition of Ga-doped ZnO and SnO(2). Using the oxygen pressure condition, we fabricated top-gate GTZO-TFTs for a logic inverter, which has two serially-connected top-gate TFTs with different gate electrodes: conducting NiOx and Al. Since the electrodes have very different work functions controlling the threshold voltages of TFTs, our inverter demonstrated a nice operation at less than 5 V with a high voltage gain of over 25. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

作者

我是这篇论文的作者

点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5

评分不足

次要评分

新颖性

-

重要性

-

科学严谨性

-

评价这篇论文

推荐

Article Engineering, Electrical & Electronic

Carrier Density-Tunable Work Function Buffer at the Channel/Metallization Interface for Amorphous Oxide Thin-Film Transistors

Mingyuan Liu, Hyeonghun Kim, Xingyu Wang, Han Wook Song, Kwangsoo No, Sunghwan Lee

Summary: The introduction of a conducting IZO buffer has successfully reduced the energy barrier for charge carriers and specific contact resistance, leading to an enhanced field effect mobility in amorphous IZO thin-film transistors.

ACS APPLIED ELECTRONIC MATERIALS (2021)

添加到收藏夹

Article Chemistry, Physical

Origin of an unintended increase in carrier density of ternary cation-based amorphous oxide semiconductors

Mingyuan Liu, Xingyu Wang, Han Wook Song, Hyeonghun Kim, Michael Clevenger, Dong-Kyun Ko, Kwangsoo No, Sunghwan Lee

Summary: This study investigates the origin of carrier density modulation in InAlZnO (IAZO), finding that the carrier density of IAZO can be significantly increased through low temperature annealing. Additionally, high-pressure oxidation experiments reveal that the equilibrium carrier density of IAZO is much higher than those typically used in TFT channel applications.

APPLIED SURFACE SCIENCE (2021)

添加到收藏夹

Article Chemistry, Physical

Ultra-thin top-gate insulator of atomic-layer-deposited HfOx for amorphous InGaZnO thin-film transistors

Yuhang Guan, Yuqing Zhang, Jinxiong Li, Jiye Li, Yuhan Zhang, Zhenhui Wang, Yuancan Ding, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang

Summary: In recent years, high-k gate dielectrics have received increasing attention in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) due to the need for stronger gate controllability. This study developed an ultra-thin top-gate insulator of atomic-layer-deposited (ALD) HfOx for amorphous indium-gallium-zinc oxide (a-IGZO) TFTs. However, the reliability of the 4-nm HfOx-gated a-IGZO transistor is poor due to interface defects caused by the interface reaction between HfOx and a-IGZO during the ALD process. To improve stability, the a-IGZO channel is pre-treated with strong oxidizing plasma. However, further reducing HfOx thickness increases gate leakage current.

APPLIED SURFACE SCIENCE (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

Subhranu Samanta, Kaizhen Han, Chen Sun, Chengkuan Wang, Annie Kumar, Aaron Voon-Yew Thean, Xiao Gong

Summary: The study found that in the sub-10-nm regime, TFT devices with a channel thickness of 3.6 nm can achieve low subthreshold swing and the highest effective mobility. The effective mobility does not degrade significantly as the alpha-IGZO thickness is reduced from 6 to 3.6 nm.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Extended-Gate Amorphous InGaZnO Thin Film Transistor for Biochemical Sensing

Jusin Lee, Min Jae Kim, Heewon Yang, Sunjin Kim, Seongoh Yeom, Gunwoo Ryu, Yoonsoo Shin, Onejae Sul, Jae Kyeong Jeong, Seung-Beck Lee

Summary: In this study, a stable and sensitive biochemical sensor based on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with a versatile extended-gate electrode was reported. The sensor demonstrated high sensitivity and specificity for protein detection, and could be potentially used for future multifunctional biomolecular sensing and analysis.

IEEE SENSORS JOURNAL (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Vacuum-free solution-based metallization (VSM) of a-IGZO using trimethylaluminium solution

Taehoon Sung, Min-Kyu Song, Se-Yeon Jung, Sein Lee, Young-Woong Song, Solah Park, Jang-Yeon Kwon

Summary: This research presents a method to reduce the resistance of amorphous indium-gallium-zinc-oxide (a-IGZO) using a vacuum-free solution-based metallization (VSM) process. By dipping the a-IGZO into trimethyl aluminium (TMA) solution, the conductivity of a-IGZO can be significantly enhanced. Self-aligned top-gate (SATG) a-IGZO thin-film-transistors (TFTs) were successfully fabricated using the VSM process, and the mechanism was explained using X-ray photoelectron spectroscopy (XPS).

RSC ADVANCES (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Tuning Electrical Properties of Amorphous Ga2O3 Thin Films for Deep UV Phototransistors

Maria Isabel Pintor-Monroy, Martin Gregorio Reyes-Banda, Carlos Avila-Avendano, Manuel A. Quevedo-Lopez

Summary: In this study, a simple and cost-effective method for fabricating thin film transistors (TFTs) based on undoped amorphous Ga2O3 thin films deposited at room temperature by magnetron sputtering is discussed. The control of Ga2O3 thin film resistivity over a wide range is demonstrated by controlling the deposition power and pressure. These TFTs exhibit promising characteristics and have been evaluated as phototransistors under DUV radiation, showing high rejection ratio, responsivity, gain, detectivity, and photosensitivity.

IEEE SENSORS JOURNAL (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Solution-processed amorphous gallium oxide gate dielectric for low-voltage operation oxide thin film transistors

Li Yuan, Shasha Li, Guoxiang Song, Xian wen Sun, Xinan Zhang

Summary: Gallium oxide thin films prepared using the solution process method were studied as gate dielectric for thin-film transistors, showing excellent dielectric performance. The optimized Ga2O3 thin film demonstrated high bias stress stability and impressive performance metrics for low-voltage operation oxide TFTs.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Three-Terminal Floating-Gate Cell for Threshold-Voltage Control of Organic Thin-Film Transistors

Kareem Mansour, Samar Elsaegh, Ute Zschieschang, Hagen Klauk, Ghada H. Ibrahim

Summary: A floating-gate (FG) cell is presented as a circuit-level approach to control the threshold voltage of organic thin-film transistors (TFTs) operated in the transdiode configuration. The concept demonstrates versatility by achieving systematic tuning of threshold voltage values and improved performance in rectifiers and inverters.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

添加到收藏夹

Article Biochemistry & Molecular Biology

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Xinyi Zhang, Kuankuan Lu, Zhuohui Xu, Honglong Ning, Zimian Lin, Tian Qiu, Zhao Yang, Xuan Zeng, Rihui Yao, Junbiao Peng

Summary: The study optimized NdIZO film as the active layer of TFT by adjusting oxygen concentration, sputtering pressure, and annealing temperature, resulting in improved semiconductor characteristics at an optimal annealing temperature of 250 degrees Celsius.

MEMBRANES (2021)

添加到收藏夹

Article Materials Science, Ceramics

Zinc oxide incorporated indium tungsten oxide amorphous thin films for thin film transistors applications

Ram Narayan Chauhan, Nidhi Tiwari

Summary: ZIWO thin film transistors fabricated by RF magnetron sputtering exhibit better device performance compared to IWO and ZnO counterparts.

JOURNAL OF NON-CRYSTALLINE SOLIDS (2021)

添加到收藏夹

Article Materials Science, Coatings & Films

Amorphous semi-insulating Al-doped In2O3 growth by atomic layer deposition for thin-film transistors

Zecheng Wu, Yu Zhang, Shiqiang Lu, Rongxu Bai, Na Gao, Kai Huang, Hao Zhu, Shen Hu, Qingqing Sun, David Wei Zhang, Xingwei Ding, Jack C. Lee, Li Ji

Summary: This study demonstrated a method of semi-insulating doping In2O3 via atomic layer deposition, fabricating indium-aluminum-oxide (IAO) transistors. By controlling the concentration of Al, it achieved high current, excellent mobility, and adjustable threshold voltage by varying Al concentrations.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2022)

添加到收藏夹

Article Physics, Condensed Matter

Homojunction structure amorphous oxide thin film transistors with ultra-high mobility

Rongkai Lu, Siqin Li, Jianguo Lu, Bojing Lu, Ruqi Yang, Yangdan Lu, Wenyi Shao, Yi Zhao, Liping Zhu, Fei Zhuge, Zhizhen Ye

Summary: AOS have unique advantages in transparent and flexible TFTs, but obtaining higher mu (FE) than LTPS has been difficult. In this study, ZnAlSnO homojunction TFTs were designed to achieve mu (FE) = 113.8 cm(2)/(V center dot s). The device exhibited optimized electrical properties with low off-current, threshold voltage, and subthreshold swing. The homojunction active layer, with a combination of micro-crystallization and carrier suppressor concentration gradient distribution, allowed for reduced off-current and positive shift in threshold voltage while maintaining high field-effect mobility. This research points to a promising direction for high-performance AOS TFTs.

JOURNAL OF SEMICONDUCTORS (2023)

添加到收藏夹

Article Nanoscience & Nanotechnology

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

Nazar Farid, Adam Brunton, Phil Rumsby, Scott Monaghan, Ray Duffy, Paul Hurley, Mingqing Wang, Kwang-Leong Choy, Gerard M. O'Connor

Summary: A new process of crystallizing amorphous silicon without melting is proposed, which includes adding a molybdenum layer to control crystallite size and achieve high-quality crystallization at low temperature. Simulations show that the transfer of energy from the molybdenum layer to the silicon film can lead to crystallization of amorphous silicon at temperatures lower than its melting point.

ACS APPLIED MATERIALS & INTERFACES (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect

Kun Liang, Dingwei Li, Huihui Ren, Momo Zhao, Hong Wang, Mengfan Ding, Guangwei Xu, Xiaolong Zhao, Shibing Long, Siyuan Zhu, Pei Sheng, Wenbin Li, Xiao Lin, Bowen Zhu

Summary: Metal oxide thin-films transistors (TFTs) produced from solution-based printing techniques can lead to large-area electronics with low cost. Through reducing the film thickness down to nanometers scale, ITO can be used as active channels in transistors, exhibiting high performance and stability. Fully printed n-type metal-oxide-semiconductor (NMOS) inverters based on ITO TFTs show extremely high gain, promising for advanced electronics applications.

NANO-MICRO LETTERS (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits

Pyo Jin Jeon, Jin Sung Kim, June Yeong Lim, Youngsuk Cho, Atiye Pezeshki, Hee Sung Lee, Sanghyuck Yu, Sung-Wook Min, Seongil Im

ACS APPLIED MATERIALS & INTERFACES (2015)

添加到收藏夹

Article Chemistry, Multidisciplinary

High-Performance, Air-Stable, Top-Gate, p-Channel WSe2 Field-Effect Transistor with Fluoropolymer Buffer Layer

Seyed Hossein Hosseini Shokouh, Pyo Jin Jeon, Atiye Pezeshki, Kyunghee Choi, Hee Sung Lee, Jin Sung Kim, Eun Young Park, Seongil Im

ADVANCED FUNCTIONAL MATERIALS (2015)

添加到收藏夹

Article Chemistry, Physical

Graphene nanoribbons formed by a sonochemical graphene unzipping using flavin mononucleotide as a template

Woojin Yoon, Yonggeun Lee, Hongje Jang, Myungsu Jang, Jin Sung Kim, Hee Sung Lee, Seongil Im, Doo Wan Boo, Jiwoong Park, Sang-Yong Ju

CARBON (2015)

添加到收藏夹

Article Engineering, Electrical & Electronic

Nitrogen-doped ZnO/n-Si core-shell nanowire photodiode prepared by atomic layer deposition

Kyung Yong Ko, Hyemin Kang, Wonseon Lee, Chang-Wan Lee, Jusang Park, Hee Sung Lee, Seongil Im, Han-Gil Kim, Soo-Hyun Kim, Byung-Wook Min, Hyungjun Kim

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2015)

添加到收藏夹

Article Chemistry, Multidisciplinary

Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching

Jin Sung Kim, Pyo Jin Jeon, Junyeong Lee, Kyunghee Choi, Hee Sung Lee, Youngsuk Cho, Young Tack Lee, Do Kyung Hwang, Seongil Im

NANO LETTERS (2015)

添加到收藏夹

Article Chemistry, Multidisciplinary

Few-Layer MoS2-Organic Thin-Film Hybrid Complementary Inverter Pixel Fabricated on a Glass Substrate

Hee Sung Lee, Jae Min Shin, Pyo Jin Jeon, Junyeong Lee, Jin Sung Kim, Hyun Chul Hwang, Eunyoung Park, Woojin Yoon, Sang-Yong Ju, Seongil Im

SMALL (2015)

添加到收藏夹

Article Multidisciplinary Sciences

Layer dependence and gas molecule absorption property in MoS2 Schottky diode with asymmetric metal contacts

Hyong Seo Yoon, Hang-Eun Joe, Sun Jun Kim, Hee Sung Lee, Seongil Im, Byung-Kwon Min, Seong Chan Jun

SCIENTIFIC REPORTS (2015)

添加到收藏夹

Letter Chemistry, Multidisciplinary

Reply to Comment on 'Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed

Jin Sung Kim, Hee Sung Lee, Seongil Im

ACS NANO (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

High-Gain Subnanowatt Power Consumption Hybrid Complementary Logic Inverter with WSe2 Nanosheet and ZnO Nanowire Transistors on Glass

Seyed Hossein Hosseini Shokouh, Atiye Pezeshki, Syed Raza Ali Raza, Hee Sung Lee, Sung-Wook Min, Pyo Jin Jeon, Jae Min Shin, Seongil Im

ADVANCED MATERIALS (2015)

添加到收藏夹

Article Chemistry, Physical

Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode

Seyed Hossein Hosseini Shokouh, Syed Raza Ali Raza, Hee Sung Lee, Seongil Im

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2014)

添加到收藏夹

Article Engineering, Electrical & Electronic

ZnO homojunction core-shell nanorods ultraviolet photo-detecting diodes prepared by atomic layer deposition

Kyung Yong Ko, Hyemin Kang, Jusang Park, Byung-Wook Min, Hee Sung Lee, Seongil Im, Ji Yeon Kang, Jae-Min Myoung, Jae-Hun Jung, Soo-Hyun Kim, Hyungjun Kim

SENSORS AND ACTUATORS A-PHYSICAL (2014)

添加到收藏夹

Article Chemistry, Multidisciplinary

Multifunctional Schottky-Diode Circuit Comprising Palladium/Molybdenum Disulfide Nanosheet

Jin Sung Kim, Hee Sung Lee, Pyo Jin Jeon, Young Tack Lee, Woojin Yoon, Sang-Yong Ju, Seongil Im

SMALL (2014)

添加到收藏夹

Article Chemistry, Multidisciplinary

Graphene Versus Ohmic Metal as Source-Drain Electrode for MoS2 Nanosheet Transistor Channel

Young Tack Lee, Kyunghee Choi, Hee Sung Lee, Sung-Wook Min, Pyo Jin Jeon, Do Kyung Hwang, Hyoung Joon Choi, Seongil Im

SMALL (2014)

添加到收藏夹

Article Automation & Control Systems

Neuron-Inspired Time-of-Flight Sensing via Spike-Timing-Dependent Plasticity of Artificial Synapses

Minseong Park, Yuan Yuan, Yongmin Baek, Andrew H. Jones, Nicholas Lin, Doeon Lee, Hee Sung Lee, Sihwan Kim, Joe C. Campbell, Kyusang Lee

Summary: The proposed resistive time-of-flight sensor mimics the biological process of spike-timing-dependent plasticity to measure depth information in an analog domain, achieving accurate 3D imaging and classification. This system opens up new possibilities for energy-efficient neuromorphic vision engineering in various fields such as LiDAR, automotive, medical imaging, and augmented/virtual reality.

ADVANCED INTELLIGENT SYSTEMS (2022)

添加到收藏夹

Article Automation & Control Systems

Efficient Defect Identification via Oxide Memristive Crossbar Array Based Morphological Image Processing

Hee Sung Lee, Yongmin Baek, Qiubao Lin, Joseph Minsu Chen, Minseong Park, Doeon Lee, Sihwan Kim, Kyusang Lee

Summary: Efficient defect identification is demonstrated through morphological image processing with minimal power consumption, utilizing an oxide transistor and memristor-based crossbar array for neuromorphic computing. A co-designed neuromorphic system with dynamic Gaussian blur kernel operation shows enhanced defect detection performance, achieving about 10^4 times more power-efficient computation compared to conventional CMOS-based digital implementation. The all-oxide-based memristive crossbar array offers unique potential for universal AIoT applications where conventional hardware is not suitable.

ADVANCED INTELLIGENT SYSTEMS (2021)

添加到收藏夹

暂无数据

© Peeref 2019-2024. All rights reserved.