Article
Engineering, Electrical & Electronic
Sandeep Vura, Usman Ul Muazzam, Vishnu Kumar, Sai Charan Vanjari, Rangarajan Muralidharan, Nath Digbijoy, Pavan Nukala, Srinivasan Raghavan
Summary: In this report, direct epitaxial integration of beta-Ga2O3 on a Si(100) substrate is demonstrated, providing opportunities for the development of deep-UV optoelectronics.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Physics, Multidisciplinary
Makram A. Fakhri, Ali A. Alwahib, Evan T. Salim, Husam Aldin A. Abdul Amir, Forat H. Alsultany, U. Hashim
Summary: The pulsed laser ablation in liquid approach was used to synthesize gallium nitride nanoparticles with different energy levels, and the structural and optical characteristics were analyzed using XRD pattern and photoluminescence spectra.
Article
Materials Science, Multidisciplinary
Jakub Toman, Darren C. Pagan, Peter Mullner, Markus Chmielus
Summary: The study demonstrates that additive manufacturing of magnetic shape-memory alloys allows for more diverse part designs and cost-effective production. By utilizing a moving laser spot with different process parameter combinations, epitaxial growth of Ni-Mn-Ga can be achieved, reducing grain content.
Article
Materials Science, Multidisciplinary
A. Bailly, P. Bouvier, S. Grenier, T. Hajlaoui, M. Gaudin, A. Y. Ramos, M. Chaker, L. Laversenne
Summary: We investigated the effect of boron doping on the functional and structural properties of VO2 thin films grown on Al2O3(0001). Boron insertion reduced the transition temperature and broadened the hysteresis loop, while slightly decreasing the resistivity contrast. The increase in boron concentration also resulted in the formation of two different epitaxial relationships in the VO2 films and the presence of a transient M2 phase in the highest doped sample.
Article
Engineering, Manufacturing
Samy Hocine, Helena Van Swygenhoven, Steven Van Petegem
Summary: In this study, operando X-ray diffraction experiments on Ti-6Al-4V were used to verify the accuracy of four FEM models in predicting the temperature evolution of the solidified domain, the cooling rates of the alpha and beta phases, and the influence of the scanning vector length on the duration of the beta phase. The comparison between simulated and experimental results showed the role of radiation loss and enhanced thermal conductivity on the cooling evolution. The evolution of lattice strains evidenced the formation of residual stresses, which can be utilized for the further development of FEM-based models inspired by phase fields and thermomechanics.
ADDITIVE MANUFACTURING
(2021)
Article
Optics
Haojie An, Jinshi Wang, Huaiyu Cui, Fengzhou Fang
Summary: This paper presents an experimental study on the laser-induced atomic and close-to-atomic scale structure of 4H-SiC using a capillary-discharged extreme ultraviolet pulse. The modification mechanism at the close-to-atomic scale is investigated through molecular dynamics simulations. The results show the formation of stripe-like structures and laser-induced periodic surface structures, demonstrating the potential of extreme ultraviolet pulses for semiconductor manufacturing at the close-to-atomic scale.
Article
Chemistry, Physical
Lukasz Janicki, Ryszard Korbutowicz, Mariusz Rudzinski, Piotr Michalowski, Sebastian Zlotnik, Milosz Grodzicki, Sandeep Gorantla, Jaroslaw Serafinczuk, Detlef Hommel, Robert Kudrawiec
Summary: This study comprehensively investigates the structural and optical properties of GaN subjected to three oxidation modes. The results reveal that all modes lead to the growth of beta-phase Ga2O3, but they differ in surface morphology, growth rate, and oxygen diffusion behavior. Only the vapor oxidation process does not degrade the material underneath the oxide layer.
APPLIED SURFACE SCIENCE
(2022)
Article
Biochemistry & Molecular Biology
Frank F. Velasquez-Barreto, Luis A. Bello-Perez, Carmen Nunez-Santiago, Hernani Yee-Madeira, Carmen E. Velezmoro Sanchez
Summary: This study aimed to determine and correlate the physicochemical, thermal, pasting, digestibility and molecular characteristics of native starches from Andean tubers, such as mashua, oca, and olluco. The results showed differences in granule size, shape, gelatinization temperatures, amylopectin chain length, and resistant starch content among the three starches. The resistant starch content exhibited a positive correlation with the molecular properties of amylose and amylopectin, gelatinization enthalpy, and molecular order.
INTERNATIONAL JOURNAL OF BIOLOGICAL MACROMOLECULES
(2021)
Editorial Material
Chemistry, Multidisciplinary
Chaojing Lu, Shiduo Sun, Yiwei Duo
Summary: The study points out the doubts surrounding Sytnyk et al.'s claims of epitaxial deposition of metal halide perovskites by inkjet printing on various substrates, emphasizing that optical microscopy and scanning electron microscopy images alone are insufficient evidence. A new methodology to quantify the volume fraction of each epitaxial component in a thin film from XRD measurements is proposed as a way to address the errors in verifying epitaxy.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Antonio Vazquez-Lopez, David Maestre, Julio Ramirez-Castellanos, Ana Cremades
Summary: In this study, semiconductor tin oxide (II) (SnO) nanoparticles and plates were synthesized at room conditions via a hydrolysis procedure. The controlled oxidation process from SnO to SnO2 was studied, and insights were gained through photoluminescence and Raman spectroscopy. Finally, a tailored spatial SnO/SnO2 micropatterning was achieved with potential applicability in optoelectronics and sensing devices.
Article
Chemistry, Multidisciplinary
Kai Zhang, Marie-Christine Hanf, Romain Bernard, Yves Borensztein, Hervei Cruguel, Andrea Resta, Yves Garreau, Alina Vlad, Alessandro Coati, Davide Sciacca, Bruno Grandidier, Mickael Derivaz, Carmelo Pirri, Philippe Sonnet, Reigis Stephan, Geoffroy Prevot
Summary: Through scanning tunneling microscopy (STM), surface X-ray diffraction (SXRD), and density functional theory, we have revealed a Ge-induced (root 109 x root 109)R +/- 24.5 degrees reconstruction on Ag(111). We have demonstrated the possibility of solving a giant surface reconstruction using SXRD and STM. The reconstructed structure consists of Ge pentagons, hexagons, and heptagons, with the inclusion of a few dispersed Ag atoms.
Article
Engineering, Electrical & Electronic
Santosh Kumar Yadav, Simran Arora, Subhabrata Dhar
Summary: The study explores the effects of growth temperature, time, oxygen partial pressure, and cooling conditions on the structural and electronic properties of In2O3 epitaxial films. It has been observed that the overall strain can transition from compressive to tensile by altering the growth parameters, leading to a systematic variation in the bandgap of the material.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Materials Science, Multidisciplinary
Md Dalim Mia, Brian C. Samuels, Pablo D. Borges, Luisa Scolfaro, Anwar Siddique, Jibesh Kanti Saha, Abdul Ahad Talukder, Ravi Droopad
Summary: Thin film wide bandgap Ga2O3 based alloys have important applications in various fields such as high power electronics, deep UV photonics, and spintronics. This study successfully grew epitaxial (Ga1-xGdx)(2)O-3 thin films on Al2O3 substrates with varied compositions, and the material properties could be tuned by adjusting the growth parameters. The results showed that higher growth temperatures favored the formation of the desired phase, and the incorporation of Gd into Ga2O3 caused lattice expansion and a red shift in bandgap. XPS spectroscopy confirmed the presence of Gd3+ oxidation states, and current voltage measurements demonstrated an increase in resistivity with Gd doping. These findings were further supported by density functional theory calculations.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2022)
Article
Physics, Applied
Samer Kurdi, Yuya Sakuraba, Keisuke Masuda, Hiroo Tajiri, Bhaskaran Nair, Guillaume F. Nataf, Mary E. Vickers, Guenter Reiss, Markus Meinert, Sarnjeet S. Dhesi, Massimo Ghidini, Zoe H. Barber
Summary: In this study, the effect of anti-site disorder on the half-metallic properties of a Mn2FeAl Heusler alloy thin film was investigated. The film was grown on TiN-buffered MgO 001 substrates via magnetron sputtering. It was found that the formation of a partially disordered L2(1) B structure due to anti-site disorder led to the deviation from half-metallic behavior.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Chemistry, Physical
Peijiao Fang, Baiwei Wang, C. P. Mulligan, T. M. Murray, S. Khare, Daniel Gall
Summary: In this study, tungsten carbide films were sputter-deposited onto Mg0(001) substrates at 400 degrees C in Ar - CH4 gas mixtures. The films were found to contain amorphous carbon and carbon vacancies. The epitaxial relationship between the cubic WCy phase layers and the substrate was demonstrated through X-ray diffraction and transmission electron microscopy analyses.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)