Interaction of H and F atoms—Origin of the high conductive stability of hydrogen-incorporated F-doped ZnO thin films

出版年份 2015 全文链接

标题

作者

关键词

Fluorine-doped ZnO thin films, H plasma treatment, High conductive stability, First principle calculation, Electrostatic attraction

出版物

Volume 589, Issue -, Pages 85-89

出版商

Elsevier BV

发表日期

2015-05-07

DOI

10.1016/j.tsf.2015.05.003

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