期刊
THIN SOLID FILMS
卷 582, 期 -, 页码 56-59出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2014.11.026
关键词
Copper Indium gallium selenide; Post-deposition treatment; Admittance spectroscopy; Alkali; Sodium; SIMS; ICP-MS
类别
资金
- Swiss national science foundation [200021_149453 / 1]
- FP7 R2R-CIGS project [283974]
- Swiss National Science Foundation (SNF) [200021_149453] Funding Source: Swiss National Science Foundation (SNF)
Co-evaporation of NaF during the 3rd stage of the low temperature Cu(In, Ga)Se-2 multi-stage process is compared to post-deposition treatment (PDT) with NaF in view of their influence on the electronic and structural properties. In case of NaF co-evaporation, quantum efficiency losses in the near infrared region and thus lower short circuit current density cause a reduced efficiency compared to solar cells prepared with NaF PDT. The formation of a deep defect with activation energy of similar to 250meV is measured by capacitance spectroscopy and can explain the deteriorated performance in such devices. In addition, NaF co-evaporation during the 3rd stage causes reduced grain size in the top part of Cu(In, Ga)Se-2 and altered In, Ga, and Cu distribution. (C) 2014 Elsevier B.V. All rights reserved.
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