期刊
THIN SOLID FILMS
卷 574, 期 -, 页码 28-31出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2014.11.049
关键词
Cu(In,Ga)(Se,S)(2); Zn(O,S); Atomic layer deposition; Sequential process
类别
资金
- European Union [262533]
- Federal Ministry for Environment, Nature Conservation and Nuclear Safety [13N11768]
We report the effect of Cu(In,Ga)(Se,S)(2) absorber surface treatments on the properties of atomic layer deposited-Zn(O,S) buffered 30 x 30 cm(2) large area modules. The absorber is prepared by the sequential process. H2O and KCN solution treatments are investigated. The absorber surface treatment is found to influence significantly the open circuit voltage and the fill factor of the full modules. Light soaking related metastabilities are also found to depend on the type of treatment. While both H2O and KCN treatments are efficient at removing Se-oxides and Na2HCO3, the KCN treatment is found to remove additionally Ga-oxides and elemental Se that are detected on the surface of the absorber. A 30 x 30 cm(2) module aperture efficiency up to 12.3% could be achieved with KCN surface treatment of the absorber. (C) 2014 Elsevier B.V. All rights reserved.
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