Article
Engineering, Electrical & Electronic
Manu Shaji, K. J. Saji, M. K. Jayaraj
Summary: A bottom gated thin film transistor H2S sensor based on zinc tin oxide was reported with a strong reduction characteristic. The sensor showed a high response value and a long response time to H2S at low concentrations.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Materials Science, Multidisciplinary
Yong Gu Lee, Woon-Seop Choi
Summary: The electrical properties of Zinc-tin-oxide thin-film transistors (TFTs) are significantly improved by adding propylene monomethyl ether acetate (PGMEA) to the solution-processed ZTO formulation during a low-viscosity inkjet printing process. These improvements include higher mobility, better threshold voltage, and stable characteristics.
ADVANCED ENGINEERING MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Chi-Hsin Huang, Yalun Tang, Tzu-Yi Yang, Yu-Lun Chueh, Kenji Nomura
Summary: Research has developed a high-performance p-channel oxide thin-film transistor (TFT) using an atomically thin p-type tin monoxide (SnO) channel, demonstrating good device performance. N-channel oxide TFTs and low-power complementary inverter circuits have been successfully fabricated using metal-liquid printing technology.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Wengao Pan, Xiaoliang Zhou, Ying Li, Wenting Dong, Lei Lu, Shengdong Zhang
Summary: By modulating the annealing atmosphere, high performance In-free ZnSnO (ZTO) thin film transistor (TFT) was achieved, with the best performance observed in ZTO TFT dealt with vacuum condition.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Computer Science, Information Systems
Sang-Hwa Jeon, Ziyuan Wang, Kyeong-Ho Seo, Junhao Feng, Xue Zhang, Jaehoon Park, Jin-Hyuk Bae
Summary: Controlling the temperature of the pre-annealing stage is crucial for the evaporation of solvent in solution-processed ZTO TFTs, leading to enhanced electrical performance and stability. Increasing the temperature can effectively remove organic defects, but excessive temperatures may result in structural defects.
Article
Chemistry, Multidisciplinary
Sunghoon Han, Changik Im, Youn Sang Kim, Changsoon Kim
Summary: Cation exchange is demonstrated as a novel solution-based method to obtain high-quality ternary metal oxide films with improved electrical properties. By replacing some Zn ions in binary metal oxide films with In or Sn ions in a solution, the resulting films show enhanced performance compared to the parent films.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Rudolf C. Hoffmann, Shawn Sanctis, Maciej O. Liedke, Maik Butterling, Andreas Wagner, Christian Njel, Jorg J. Schneider, Sherif Okeil
Summary: The cover of this issue features Jorg J. Schneider and colleagues from Technical University Darmstadt, Helmholtz-Zentrum Dresden-Rossendorf, and KIT Karlsruhe showcasing the application of high energy electron/positron couples to detect defect sites in semiconducting zinc oxide thin films.
CHEMISTRY-A EUROPEAN JOURNAL
(2021)
Article
Chemistry, Multidisciplinary
Yu-Jin Hwang, Do-Kyung Kim, Sang-Hwa Jeon, Ziyuan Wang, Jaehoon Park, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Jin-Hyuk Bae
Summary: By controlling the annealing time, the effect of structural relaxation on the electrical characteristics and bias stability of zinc-tin oxide thin-film transistors (TFTs) was investigated. Increased structural relaxation led to an increase in oxygen vacancies, resulting in higher mobility and a negative shift in threshold voltage. The positive-bias stress of the TFTs was enhanced with increased structural relaxation.
Article
Engineering, Electrical & Electronic
Ji Ye Lee, Byeong-Kwon Ju, Sang Yeol Lee
Summary: The metal-capping structure with four-terminal driving allows for tunability of the threshold voltage, improving the performance of thin-film transistors. This operating principle has potential applications in various systems, providing compensation for external stresses affecting display pixels.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
S. Arulkumar, S. Parthiban, J. Y. Kwon
Summary: The room temperature sputtered indium silicon oxide thin-films were annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The results showed that the annealing temperature had a significant influence on the structure and properties of the thin films, and the highest mobility was achieved at an annealing temperature of 200 degrees Celsius.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Computer Science, Information Systems
Ye-Ji Han, Se Hyeong Lee, So-Young Bak, Tae-Hee Han, Sangwoo Kim, Moonsuk Yi
Summary: This study aimed to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs by fabricating them at low annealing temperatures using a self-combustion method. The optimized device exhibited satisfactory performance, showcasing the potential of this new approach for TFT manufacturing.
Article
Materials Science, Multidisciplinary
Juhyung Seo, Teahyun Park, Hocheon Yoo
Summary: This study systematically investigates a solution processed zinc-tin-oxide film and obtains suitable turn-on voltage and uniform charge transport property. The film is applied to a complementary inverter logic and demonstrates excellent circuit performance.
ORGANIC ELECTRONICS
(2022)
Article
Chemistry, Physical
Gwang-Bok Kim, Nuri On, Taikyu Kim, Cheol Hee Choi, Jae Seok Hur, Jun Hyung Lim, Jae Kyeong Jeong
Summary: In0.22Zn delta Sn0.78-delta O1.89-delta (delta = 0.55) films with a single spinel phase are successfully grown at a low temperature (300 degrees C) through careful cation composition design and a catalytic chemical reaction. Thin-film transistors (TFTs) with amorphous In0.22Zn delta Sn0.78-delta O1.89-delta (delta = 0.55) channel layers show reasonable mobility, while TFTs with polycrystalline spinel In0.22Zn delta Sn0.78-delta O1.89-delta (delta = 0.55) channel layers exhibit high field-effect mobility and excellent stability.
Article
Engineering, Electrical & Electronic
Ji Ye Lee, Byeong-Kwon Ju, Sang Yeol Lee
Summary: An amorphous metal-oxide semiconductor, a-SZTO, shows high performance and is considered a representative next-generation semiconductor material due to its high electric field mobility, excellent uniformity, and high transmittance. The addition of Si helps control its electrical properties and stability by acting as an oxygen vacancy inhibitor. By increasing the Si composition, the concentration of oxygen vacancies decreases, resulting in a decrease in mobility and on current. Metal capping structure and varying the length of the capping can further improve the device characteristics and stability.
SOLID-STATE ELECTRONICS
(2023)
Article
Chemistry, Physical
Christophe Avis, Jin Jang
Summary: The impact of NF3 plasma treatment on the HfO2 gate insulator of a-SnOx TFTs was studied. The 10 s-treated TFT demonstrated the best stability, with significantly decreased density of states (DOS) and good HfO2/a-SnOx interface quality.
