期刊
THIN SOLID FILMS
卷 587, 期 -, 页码 47-51出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2015.01.036
关键词
Molybdenum disulfide; Chemical vapor deposition; Field effect transistor
类别
资金
- National Research Foundation of Korea (NRF) grant - Korean government (MSIP) [NRF-2013R1A2A2A01015824]
We have studied a successive two-step chemical vapor deposition (CVD) method to prepare large-scale MoS2 thin films using a horizontal hot wall furnace. The CVD growth was followed by evaporation of the MoO3 precursor on similar to 2.5 x 2.5 cm(2) SiO2/Si substrates in the first step and a temperature ramp for sulfurization as a second step. Synthesized films were systematically analyzed by various structural and optical measurements. Crystallinity of the synthesized MoS2 tri-layer films exhibited a typical 2H-MoS2 structure and uniformly covered the whole substrate. MoS2 field effect transistors were fabricated by using the obtained CVD-MoS2, and these showed n-type behavior with an on/off ratio of about 10(3). (C) 2015 Elsevier B.V. All rights reserved.
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