Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers

标题
Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers
作者
关键词
-
出版物
PHYSICAL REVIEW B
Volume 81, Issue 12, Pages -
出版商
American Physical Society (APS)
发表日期
2010-03-13
DOI
10.1103/physrevb.81.125314

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