Mid- to long-wavelength infrared plasmonic-photonics using heavily doped n-Ge/Ge and n-GeSn/GeSn heterostructures

Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures

(2011) Adam M. Crook et al.   APPLIED PHYSICS LETTERS

Infrared plasmons on heavily-doped silicon

(2011) James C. Ginn et al.   JOURNAL OF APPLIED PHYSICS

All-semiconductor active plasmonic system in mid-infrared wavelengths

(2011) Debin Li et al.   OPTICS EXPRESS

IR permittivities for silicides and doped silicon

(2010) J. W. Cleary et al.   JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS

Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode

(2010) G. Sun et al.   OPTICS EXPRESS

Low-loss silicide/silicon plasmonic ribbon waveguides for mid- and far-infrared applications

(2009) Sang-Yeon Cho et al.   OPTICS LETTERS

Infrared dielectric function ofp-typeGe0.98Sn0.02alloys

(2009) Vijay R. D’Costa et al.   PHYSICAL REVIEW B

Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bands

(2009) Vijay R D'Costa et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Molecular approaches to p- and n-nanoscale doping of Ge1−ySny semiconductors: Structural, electrical and transport properties

(2009) Junqi Xie et al.   SOLID-STATE ELECTRONICS

Longwave plasmonics on doped silicon and silicides

(2008) Richard Soref et al.   OPTICS EXPRESS