In situcontrol of oxygen vacancies in TiO2by atomic layer deposition for resistive switching devices

标题
In situcontrol of oxygen vacancies in TiO2by atomic layer deposition for resistive switching devices
作者
关键词
-
出版物
NANOTECHNOLOGY
Volume 24, Issue 29, Pages 295202
出版商
IOP Publishing
发表日期
2013-06-26
DOI
10.1088/0957-4484/24/29/295202

向作者/读者发起求助以获取更多资源

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started