Article
Chemistry, Multidisciplinary
Gangrong Li, Qianhui Wei, Shuhua Wei, Jing Zhang, Qingxi Jin, Guozhi Wang, Jiawei Hu, Yan Zhu, Yun Kong, Qingzhu Zhang, Hongbin Zhao, Feng Wei, Hailing Tu
Summary: In this study, a pH-responsive hydrogel-modified silicon nanowire field-effect transistor was developed for pH sensing. The hydrogel sensor demonstrated stable and repeatable measurement of buffer pH in the range of 3-13, with a high pH sensitivity. The design of the sensor shows promise for future biosensing applications utilizing the excellent biocompatibility of hydrogels.
Review
Chemistry, Analytical
Huiping Li, Dujuan Li, Huiyi Chen, Xiaojie Yue, Kai Fan, Linxi Dong, Gaofeng Wang
Summary: As a new type of one-dimensional semiconductor nanometer material, silicon nanowires (SiNWs) have promising applications in the field of biomedical sensing. SiNWs possess excellent electronic properties that can enhance the detection sensitivity of biosensors. SiNWs combined with field effect transistors (FETs) form a special biosensor with high sensitivity and target selectivity in real-time and label-free. SiNW-FETs have gained more attention in biomedical detection. This review critically examines the progress of SiNW-FETs, focusing on reversible surface modification methods. Additionally, it summarizes the applications of SiNW-FETs in DNA, protein, and microbial detection, while discussing their working principle and technical approaches. The review provides extensive discussion for studying the challenges in the future development of SiNW-FETs.
Article
Biophysics
Shulin Chen, Yan Dong, Tzu-Li Liu, Jinghua Li
Summary: This work presents a novel strategy for fabricating waterproof and flexible biochemical sensors with active electronic components that can operate continuously in liquid environments. The ultrathin encapsulation layer derived from monocrystalline Si nanomembranes enables the continuous operation of field-effect transistors for chemical sensing, showing great potential for future waterproof and scalable biochemical sensors with active functionalities. The excellent stability in liquid environments and pH sensing performance of these transistors suggest broad applicability in biomedical research, food science, and advanced healthcare.
BIOSENSORS & BIOELECTRONICS
(2022)
Article
Nanoscience & Nanotechnology
Taekham Kim, Doohyeok Lim, Jaemin Son, Kyoungah Cho, Sangsig Kim
Summary: This study demonstrates reconfigurable n- and p-channel operations in a tri-top-gate field-effect transistor made of a p(+)-i-n(+) silicon nanowire. The device features simple design and high performance, allowing control of both operation modes on the same device.
Article
Multidisciplinary Sciences
Qitao Hu, Si Chen, Paul Solomon, Zhen Zhang
Summary: In this study, sub-10-nm electrical double layer-gated silicon nanowire field-effect transistors (SiNWFETs) are used to directly detect the events of capturing and emitting a single hydrogen ion (H+) at the solid/liquid interface. The ability to achieve ion detection with single charge resolution is demonstrated, along with a systematic investigation of the kinetics of single H+-DB interactions. The SiNWFETs show unprecedented capability for electrical sensing applications, especially in studying the physics of solid/liquid interfacial interactions at the single charge level.
Article
Engineering, Electrical & Electronic
Muhammad Awais, Habeeb Mousa, Kasif Teker
Summary: This study investigates the effect of pH on transport properties of silicon carbide nanowire field-effect transistor (SiCNW-FET) and finds that the device exhibits different behaviors under different pH solutions.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Materials Science, Multidisciplinary
Cecile Delacour, Farida Veliev, Thierry Crozes, Guillaume Bres, Julien Minet, Irina Ionica, Thomas Ernst, Anne Briancon-Marjollet, Mireille Albrieux, Catherine Villard
Summary: SiNW-FETs offer a local probe for sensing neuronal activity at the subcellular scale and can be combined with micropatterning or microfluidic techniques to build model neuron networks. This versatile device has potential applications in various research areas including diagnosis, prosthesis, and health security.
ADVANCED ENGINEERING MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Lester U. Vinzons, Akhilesh Kumar Gupta, Tung-Yen Lai, Shu-Ping Lin
Summary: Cell-coupled silicon nanowire field-effect transistor devices were used to study the impedance spectra of cells. Live observation of cells on the actual chips before impedance measurement revealed significant changes in the lower frequency range. Impedance spectra showed distinct variations after cells covered the surface of SiNW.
Article
Nanoscience & Nanotechnology
Young-Soo Park, Doohyeok Lim, Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim
Summary: This paper proposes inverting logic-in-memory cells with silicon nanowire feedback field-effect transistors, demonstrating steep switching and holding characteristics. The cells exhibit nanosecond operating speed, ultra-high voltage gain, and longer retention time compared to conventional DRAM. The disturbance characteristics of half-selected cells within the inverting LIM array confirm the proper functioning of the random access memory array.
Article
Chemistry, Physical
Chen Liu, Binjian Zeng, Siwei Dai, Shuaizhi Zheng, Qiangxiang Peng, Jinjuan Xiang, Jianfeng Gao, Jie Zhao, Jincheng Zhang, Min Liao, Yichun Zhou
Summary: This study investigates the stability of multiple memory states in Hf0.5Zr0.5O2-based multilevel ferroelectric field-effect transistors (FeFETs). The results show that the multiple memory states do not exhibit significant degradation during write and read disturb cycles. Additionally, the intermediate memory states with unsaturated ferroelectric polarizations demonstrate better retention characteristics compared to the memory state with saturated ferroelectric polarization.
JOURNAL OF MATERIOMICS
(2022)
Article
Chemistry, Analytical
Abhiroop Bhattacharjee, Thanh Chien Nguyen, Vivek Pachauri, Sven Ingebrandt, Xuan Thang Vu
Summary: Using silicon nanowire field-effect transistors (SiNW-FETs) for impedance sensing shows potential for label-free detection of biomolecules by overcoming the Debye-screening limitation. Employing an electronic circuit model in SPICE, we quantitatively evaluated the influence of various device parameters on the transfer function of the SiNW-FETs and investigated how biomolecule binding affects impedance spectra. Mathematical analysis and simulation results led to proposed methods for improving the impedimetric readout of SiNW-FET biosensors.
Article
Chemistry, Multidisciplinary
Jovian Delaforce, Masiar Sistani, Roman B. G. Kramer, Minh A. Luong, Nicolas Roch, Walter M. Weber, Martien den Hertog, Eric Robin, Cecile Naud, Alois Lugstein, Olivier Buisson
Summary: Superconductor-semiconductor-superconductor heterostructures with monolithic Al-Ge-Al nanowire featuring high junction transparency Josephson field-effect transistors have been demonstrated in this study to investigate low-temperature transport properties of intrinsic Ge quantum dots, showing tunability of device performance from insulating to supercurrent regimes. This provides a promising architecture for hybrid superconductor-semiconductor devices for the study of Majorana zero modes and components of quantum computing.
ADVANCED MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Yanan Guo, Dong Liu, Chengcheng Miao, Jiamin Sun, Zhiyong Pang, Peng Wang, Mingsheng Xu, Ning Han, Zai-Xing Yang
Summary: In this study, a ternary alloy of In0.2Ga0.8As nanowires was successfully prepared to balance the weak n-type characteristics in GaAs NWFETs and the poor p-type characteristics in InAs NWFETs. The resulting nanowires showed potential for application in near-infrared photodetection, with careful design of the surface oxide layer and body defects making them suitable for use in next-generation optoelectronic devices.
Article
Engineering, Electrical & Electronic
Chuanyu Fu, Yanan Ding, Yixin Zhu, Zhijie Xin, Guoxia Liu, Fukai Shan
Summary: One-dimensional metal-oxide nanowire networks (NNs) have been fabricated for field-effect transistors (FETs) with different Sn/Ga ratios and welded to improve their electrical performance. The FET based on Sn-0.8 Ga-0.2 O NNs/ZrOx displays high stability and performance, providing a foundation for the development of low-cost, high-performance electronic devices.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Xiaopan Song, Ting Zhang, Lei Wu, Ruijin Hu, Wentao Qian, Zongguang Liu, Junzhuan Wang, Yi Shi, Jun Xu, Kunji Chen, Linwei Yu
Summary: This research demonstrates a fabrication method for large-area stretchable electronics using silicon nanowire field effect transistors (SiNW-FETs). By utilizing the solid-liquid-solid mechanism, SiNW channels can be precisely grown onto elastomers and transferred onto large-area substrates. The SiNW-FETs exhibit high performance and stability, making them promising for future flexible display and wearable electronic applications.