A facile route to Si nanowire gate-all-around field effect transistors with a steep subthreshold slope

标题
A facile route to Si nanowire gate-all-around field effect transistors with a steep subthreshold slope
作者
关键词
-
出版物
Nanoscale
Volume 5, Issue 19, Pages 8968
出版商
Royal Society of Chemistry (RSC)
发表日期
2013-08-02
DOI
10.1039/c3nr02552g

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