☆ 4.8 Article

Monolithic Barrier-All-Around High Electron Mobility Transistor with Planar GaAs Nanowire Channel

NANO LETTERS (2013)

期刊

NANO LETTERS

卷 13, 期 6, 页码 2548-2552

出版社

AMER CHEMICAL SOC

DOI: 10.1021/nl400620f

关键词

GaAs; nanowire; high-electron-mobility transistors; III-V; VLSI

类别

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

资金

National Science Foundation [1006581, 1001928]
Division Of Materials Research
Direct For Mathematical & Physical Scien [1006581] Funding Source: National Science Foundation
Div Of Electrical, Commun & Cyber Sys
Directorate For Engineering [1001928] Funding Source: National Science Foundation

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摘要

High-quality growth of planar GaAs nanowires (NWs) with widths as small as 35 nm is realized by comprehensively mapping the parameter space of group III flow, V/III ratio, and temperature as the size of the NWs scales down. Using a growth mode modulation scheme for the NW and thin film barrier layers, monolithically integrated AlGaAs barrier-all-around planar GaAs NW high electron mobility transistors (NW-HEMTs) are achieved. The peak extrinsic transconductance, drive current, and effective electron velocity are 550 mu S/mu m, 435 mu A/mu m, and similar to 2.9 x 10(7) cm/s, respectively, at 2 V supply voltage with a gate length of 120 nm. The excellent DC performance demonstrated here shows the potential of this bottom-up planar NW technology for low-power high-speed very-large-scale-integration (VLSI) circuits.

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