Article
Chemistry, Multidisciplinary
Bogdan R. R. Borodin, Prokhor A. A. Alekseev, Vladislav Khayrudinov, Evgeniy Ubyivovk, Yury Berdnikov, Nickolay Sibirev, Harri Lipsanen
Summary: Control over doping at the nanoscale during nanostructure growth is crucial for device fabrication. This study investigates the p (Zn)- and n (Sn)- doping distributions and the formation of 3D p-n junctions in planar GaAs nanowires grown on doped GaAs substrates. Various techniques, including scanning electron microscopy, transmission electron microscopy, and conductive atomic force microscopy, are used to analyze the nanowire morphology and doping distribution. The results show that bipolar transistor-like lateral nanostructures can be formed during p-n or n-p growth on misoriented (001) GaAs substrates, while core-shell field effect transistor-like structures can be synthesized on singular (001) substrates. The effects of substrate misorientation on 3D doping distribution are attributed to the preferential incorporation of dopants in polar side facets compared to a non-polar top (001) facet.
Article
Chemistry, Physical
Fengyuan Lin, Jinzhi Cui, Zhihong Zhang, Zhipeng Wei, Xiaobing Hou, Bingheng Meng, Yanjun Liu, Jilong Tang, Kexue Li, Lei Liao, Qun Hao
Summary: A high-performance GaAs nanowire photodetector was fabricated by modifying the surface defects with Au nanoparticles. Plasmons and Schottky barriers were introduced to enhance light absorption and carrier separation. The modified photodetectors showed reduced dark current and increased photocurrent and responsivity. The improvement in performance was analyzed using the energy band theory model. This work proposes a new method to enhance the performance of GaAs nanowire photodetectors.
Article
Chemistry, Inorganic & Nuclear
Junrong Hou, Xianyun Peng, Jiaqiang Sun, Shusheng Zhang, Qian Liu, Xinzhong Wang, Jun Luo, Xijun Liu
Summary: This study reports a Mn-doped CoS2 catalyst with excellent bifunctional electrocatalytic activity and long-term stability for the hydrogen evolution reaction (HER) and hydrazine oxidation reaction (HzOR). The introduction of Mn significantly reduces the Gibbs free energy of the adsorbed H* and the potential rate-limiting step for the HzOR process. This work provides theoretical guidance for the design of advanced bifunctional electrocatalysts and promotes high efficiency and energy-saving H-2 production technology.
INORGANIC CHEMISTRY FRONTIERS
(2022)
Article
Materials Science, Multidisciplinary
Yan Sun, Lei Liu, Zhisheng Lv, Xingyue Zhangyang, Feifei Lu, Jian Tian
Summary: By adding an external electric field to control the motion trajectory of electrons in GaAs nanowire structures, the emission efficiency of the photocathode can be improved. The quantum efficiency was calculated under different geometric parameters, showing that a certain intensity of electric field can enhance photoelectric emission.
Article
Nanoscience & Nanotechnology
Wonsik Choi, Guoqiang Zhang, Hsien Chih Huang, Parsian Katal Mohseni, Chen Zhang, Jeong Dong Kim, Xiuling Li
Summary: This study demonstrates the monolithic formation of lateral p-n junctions in GaAs nanowires on a planar substrate through Au-assisted vapor-liquid-solid selective lateral epitaxy. The p-n junctions formed exhibit good rectification performance and a high minority carrier diffusion length.
Article
Chemistry, Physical
Robin Sjokvist, Daniel Jacobsson, Marcus Tornberg, Reine Wallenberg, Egor D. Leshchenko, Jonas Johansson, Kimberly A. Dick
Summary: The nanowire geometry is favored for ternary semiconductor growth due to the flexibility in tuning composition and properties without requiring substrate lattice matching. The composition control of InxGa1-xAs nanowires was studied with in situ measurements using environmental transmission electron microscopy, revealing a different compositional relationship than predicted by thermodynamic models. A kinetic model was constructed to predict compositional trends by suppressing miscibility gaps, suggesting compositional control across the entire range is achievable.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Anjan Mukherjee, Dingding Ren, Aleksander Buseth Mosberg, Per-Erik Vullum, Antonius T. J. van Helvoort, Bjorn-Ove Fimland, Helge Weman
Summary: Through electrical measurements and structural characterization of a radial p-i-n junction GaAs nanowire array solar cell grown on a silicon substrate, it was found that the solar cell suffers from high leakage current density and poor efficiency due to defects, electrical non-uniformity, and electrical shorting between the GaAs shell of the nanowires and the silicon substrate. This study provides valuable insights for improving the structural design of radial junction nanowire array solar cells in order to enhance the photoconversion efficiency.
ACS APPLIED NANO MATERIALS
(2023)
Article
Physics, Applied
Huayang Huang, Xiaolan Yan, Xuelin Yang, Wensheng Yan, Zeming Qi, Shan Wu, Zhaohua Shen, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bing Huang, Bo Shen
Summary: By combining experimental observations and first-principles simulations, it was found that in p-type GaN, the C impurity mainly occupies the N site rather than the Ga site, and this phenomenon is attributed to an H-induced E-F tuning effect. This work not only provides clear evidence for C defect formation in p-GaN, but also significantly contributes to understanding the role of C-related hole-killers in the electrical and optoelectrical properties of p-GaN and even p-AlGaN.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Yi Han, Jingxuan Sun, Benjamin Richstein, Frederic Allibert, Ionut Radu, Jin-Hee Bae, Detlev Gruetzmacher, Joachim Knoch, Qing-Tai Zhao
Summary: Fully silicided source/drain Si gate-all-around (GAA) nanowire p-FETs with nanowire diameter of 5 nm were fabricated and characterized from room temperature down to 5.5 K. The devices exhibited close to ideal transfer characteristics and sharp switching at both room temperature and 5.5 K, with improved transconductance at 5.5 K.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Physics, Applied
Jumpei G. Nakamura, Yukinobu Kawakita, Koichiro Shimomura, Takashi Suemasu
Summary: Investigating the shallow impurity levels formed by hydrogen defects in semiconductors is an important topic in semiconductor research. The mu SR experiments confirmed the formation of muonium in GeS, but not in GeTe, indicating that it does not affect the electrical properties. The properties of muonium suggested it does not form a typical impurity level that influences the electrical properties.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Chemistry, Multidisciplinary
Louis Bailly-Salins, Marco Vettori, Thomas Dursap, Philippe Regreny, Gilles Patriarche, Michel Gendry, Jose Penuelas, Alexandre Danescu
Summary: In this paper, we investigated the surface energy of liquid droplets wetting cylindrical and conical cavities and their relationship with the geometry. We found that the equilibrium wetting angles of the droplets on the bottom and sidewall of the cavity can be controlled to ensure dewetting of the lateral surface. This result is important for controlling the verticality during nanowire growth using the vapor-liquid-solid method.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Engineering, Electrical & Electronic
Issam Lakhdari, Nouredine Sengouga, Madani Labed, Toufik Tibermacine, Riaz Mari, Mohamed Henini
Summary: In this study, Schottky diodes based on Be-doped p-type AlGaAs were grown and their current-voltage and capacitance-voltage characteristics were measured. The effect of the Schottky contact diameter on the device characteristics was investigated, and the figures of merit and interface states were analyzed. The results showed that the interface state density increased with increasing contact diameter and saturated beyond 400 μm. The frequency dependence of the capacitance-voltage characteristics was also related to these interface states.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Physics, Applied
Ting Liu, Chen Li, Beilei Yuan, Yang Chen, Haoming Wei, Bingqiang Cao
Summary: This Letter reports the dopant compensation effect of P-type doped MAPb(1-)(x)CuxI3 alloyed perovskite crystals. The doped Cu+ ions change the conductive type of the crystal and significantly increase the resistivity. The doped crystals exhibit specific peaks related to Cu+ dopant in temperature-dependent PL spectroscopy.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
M. Kamruzzamana, J. Antonio Zapien, M. Rahman, R. Afrose, T. Khairul Anam, M. Nurul Huda Liton, M. Al-Helal, M. Khalilur Rahman Khan
Summary: MoS2 is an alternative to graphene with intriguing properties, requiring modification for achieving p-MoS2 and complementary device applications. Doping with Ag and Ag-Cu has been investigated both theoretically and experimentally, revealing enhanced absorption in the visible region and confirmation of p-type MoS2 characteristics.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Nanoscience & Nanotechnology
Mohamad Insan Nugraha, Bin Sun, Hyunho Kim, Abdulrahman El-Labban, Saheena Desai, Neha Chaturvedi, Yi Hou, F. Pelayo Garcia de Arquer, Husam N. Alshareef, Edward H. Sargent, Derya Baran
Summary: Efficient thermoelectric generators require further progress in developing n-type semiconductors with low thermal conductivity and high electrical conductivity. This study demonstrates a new strategy of chemical doping to improve electron transport while maintaining low thermal transport in QDMH films, leading to enhanced n-type thermoelectric behavior. The use of cesium carbonate salts as a dopant enables efficient n-type doping in QDMH films, resulting in significantly lower thermal conductivity compared to prior films.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Education & Educational Research
J. A. Gilmour-White, A. Picton, A. Blaikie, A. K. Denniston, R. Blanch, J. Coleman, P. I. Murray
BMC MEDICAL EDUCATION
(2019)
Article
Materials Science, Multidisciplinary
Saeid Biria, Thomas S. Wilhelm, Parsian K. Mohseni, Ian D. Hosein
ADVANCED OPTICAL MATERIALS
(2019)
Article
Optics
Xinyu Ma, Chijie Zhuang, Rong Zeng, James J. Coleman, Weidong Zhao
Article
Nanoscience & Nanotechnology
Wonsik Choi, Guoqiang Zhang, Hsien Chih Huang, Parsian Katal Mohseni, Chen Zhang, Jeong Dong Kim, Xiuling Li
Summary: This study demonstrates the monolithic formation of lateral p-n junctions in GaAs nanowires on a planar substrate through Au-assisted vapor-liquid-solid selective lateral epitaxy. The p-n junctions formed exhibit good rectification performance and a high minority carrier diffusion length.
Article
Engineering, Electrical & Electronic
Wonsik Choi, Hsien-Chih Huang, Shizhao Fan, Parsian K. Mohseni, Minjoo Larry Lee, Xiuling Li
Summary: In this study, high-quality and dense GaP vertical nanopillar arrays were directly grown on Si (111) substrates for the first time through selective area epitaxy (SAE) using MOCVD. The effect of TMGa flow rate, growth temperature, and V/III ratio on the growth process was systematically studied. The findings showed uniform growth of GaP NPs over a patterned area with a high yield. GaP vertical p-i-n NP diodes were successfully fabricated and exhibited excellent ideality factor and rectification ratio, demonstrating the potential for GaP NP-based optoelectronic devices.
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2022)
Article
Nanoscience & Nanotechnology
Alireza Abrand, Mohadeseh A. Baboli, Anastasiia Fedorenko, Stephen J. Polly, Evan Manfreda-Schulz, Seth M. Hubbard, Parsian K. Mohseni
Summary: We present a low-cost and scalable approach for the synthesis of wafer-scale InAs nanowire (NW) arrays on photo-lithographically patterned, reusable Si wafers using a localized selfassembly (LSA) epitaxial growth technique. The NW arrays can be delaminated and reused for the fabrication of flexible devices. The reuse of Si substrates for III-V epitaxy is also demonstrated.
ACS APPLIED NANO MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Young Ho Song, Doo Gun Kim, Dong Wook Lee, Jeong Woo Hwang, Parsian K. Mohseni, Jae Cheol Shin, Xiuling Li
Summary: This study demonstrates the direct heteroepitaxy of III-V nanowire arrays on silicon substrates. By fabricating a micrometer-scale SiNx pattern using photolithography technique, the diameter and height of the nanowires can be controlled effectively.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Chemistry, Multidisciplinary
Md Nazmul Hasan, Yixiong Zheng, Junyu Lai, Edward Swinnich, Olivia Grace Licata, Mohadeseh A. Baboli, Baishakhi Mazumder, Parsian K. Mohseni, Jung-Hun Seo
Summary: The structure property of non-ideal Si/GaAs heterostructures integrated with ultra-thin oxide tunneling interfacial layer was investigated. The surface passivation of Si NMs affects the chemical composition and reaction mechanism at the UO interface, leading to the formation of unwanted GaAs oxide layer. This native oxide stack significantly degrades the thermal properties of the Si/GaAs heterostructure. The poor surface passivation on one side of the heterointerface leads to both-side oxidation, resulting in severe deterioration of the transport properties across the heterojunction formed with the UO layer.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Alireza Abrand, Nicklas Anttu, Parsian K. Mohseni
Summary: Vertical III-V nanowire arrays are potential candidates for infrared photodetection applications. We propose a nanophotonic engineering approach to achieve spectrally-selective light absorption while minimizing the volume of the absorbing medium. By adjusting the core and shell dimensions, unity absorption can be selectively achieved in the 2 to 3 μm wavelength range.
Article
Chemistry, Multidisciplinary
Mohadeseh A. Baboli, Alireza Abrand, Robert A. Burke, Anastasiia Fedorenko, Thomas S. Wilhelm, Stephen J. Polly, Madan Dubey, Seth M. Hubbard, Parsian K. Mohseni
Summary: This study demonstrates the selective-area van der Waals epitaxy of InAs nanowires on isolated molybdenum disulfide (MoS2) domains. By exploring MOCVD growth parameters, single nanowires are positioned on multi-layer MoS2 micro-plates with pattern-free growth. Pre-growth poly-l-lysine surface treatment is essential for mitigating nucleation along MoS2 edges and promoting growth along the interior region. The resulting crystal structure is a combination of wurtzite and zinc-blend phases with a common lattice arrangement between InAs nanowires and MoS2 domains.
NANOSCALE ADVANCES
(2021)
Proceedings Paper
Energy & Fuels
Julia R. D'Rozario, Stephen J. Polly, George T. Nelson, Parsian K. Mohseni, David M. Wilt, Rao Tatavarti, Seth M. Hubbard
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
(2020)
Proceedings Paper
Energy & Fuels
Anastasiia Fedorenko, Alireza Abrand, Parsian Mohseni, Seth Hubbard
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
(2020)
Article
Nanoscience & Nanotechnology
Thomas S. Wilhelm, Ian L. Kecskes, Mohadeseh A. Baboli, Alireza Abrand, Michael S. Pierce, Brian J. Landi, Ivan Puchades, Parsian K. Mohseni
ACS APPLIED NANO MATERIALS
(2019)
Meeting Abstract
Public, Environmental & Occupational Health
J. Coleman, C. Anton, Y. Nampijja, K. Badyal, R. Ferner
Article
Materials Science, Multidisciplinary
Thomas S. Wilhelm, Alex P. Kolberg, Mohadeseh A. Baboli, Alireza Abrand, Kris A. Bertness, Parsian K. Mohseni
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2019)
