Article
Nanoscience & Nanotechnology
Ki Seok Kim, Min Seong Kim, Jusung Chung, Dongwoo Kim, I. Sak Lee, Hyun Jae Kim
Summary: We present a transparent and flexible polyimide (PI)-doped single-layer (PSL) phototransistor for visible light detection. By co-sputtering amorphous indium-gallium-zinc oxide (IGZO) and PI targets, the PSL is deposited on a SiO2 gate insulator, serving as both a channel layer and a visible-light absorption layer. The PI doping leads to improved optoelectronic characteristics, including higher photoresponsivity, photosensitivity, and specific detectivity, attributed to the induced subgap states. A flexible PSL phototransistor is also fabricated, demonstrating stable optoelectronic characteristics even after 10,000 bending tests.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Physical
Chun-Lin Su, Kogularasu Sakthivel, Yu-Tsun Yao, Po-Hsun Liao, Ming-Lun Lee, Jinn-Kong Sheu
Summary: This article discusses a new method to improve the water-splitting efficiency of gallium nitride photoelectrodes using alkali-treated NiOx films. The study shows that NiOOH formed on the NiOx/n-GaN surface can act as an electrocatalyst to promote carrier transportation kinetics on GaN photoanodes. By using this method, the photocurrent density is increased, and a significant H-2 production rate is achieved.
ACS APPLIED ENERGY MATERIALS
(2021)
Article
Physics, Applied
Ta-Shun Chou, Palvan Seyidov, Saud Bin Anooz, Raimund Grueneberg, Jana Rehm, Tran Thi Thuy Vi, Andreas Fiedler, Kornelius Tetzner, Zbigniew Galazka, Martin Albrecht, Andreas Popp
Summary: In this study, the development of unwanted parasitic particles in the MOVPE chamber during the growth of mu m level films is comprehensively investigated. The density of parasitic particles is observed to be significant at film thicknesses starting from >1.5 to 2 mu m. These particles induce structural defects, such as twin lamellae, which adversely affect the electrical properties of the grown film. The parasitic particles originate from parasitic reactions within the chamber triggered by the promoted gas-phase reactions during the growth process, and their density can be reduced by increasing total gas flow and reducing the showerhead distance to the susceptor. After minimizing the density of parasitic particles, film thicknesses up to 4 mu m have been achieved. RT Hall measurements reveal carrier mobilities of 160 cm(2)V(-1)s(-1) at carrier concentrations of 5.7 x 10(16) cm(-3).
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Physical
Avishek Banik, John Z. Tubbesing, Bin Luo, Xiaoting Zhang, Jay A. Switzer
Summary: The development of future optoelectronic materials relies on the high-performance p-type materials with optical transparency. Epitaxial growth of gamma-CuI on single crystalline Si(111) using a room-temperature electrochemical method demonstrates high in-plane and out-of-plane order. The deposition mechanism involves nucleating CuI seed crystals on n-Si(111) and simultaneous oxidation of Si to form SiOx, resulting in the lateral overgrowth of CuI seeds into a continuous film.
CHEMISTRY OF MATERIALS
(2021)
Review
Physics, Applied
Rundi Qiao, Hongpeng Zhang, Shuting Zhao, Lei Yuan, Renxu Jia, Bo Peng, Yuming Zhang
Summary: Gallium oxide (Ga2O3) is a promising ultra-wide bandgap semiconductor attracting increasing attention in high-power electronics, RF operation, and solar blind UV detectors. Recent research efforts have led to rapid advances in device design and performance of gallium oxide transistors. Various state-of-the-art structures and processes used in Ga2O3 based FETs have been summarized and compared, revealing the potential of Ga2O3 FETs. The prospect of Ga2O3 based FETs for high-power and RF applications is also analyzed.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Chemistry, Physical
Yong Ha Choi, Kwang Hyeon Baik, Suhyun Kim, Jihyun Kim
Summary: The etching process of beta-Ga2O3 semiconductor using phosphoric acid as demonstrated in this study showed an anisotropic etch pit formation along the [001] direction. The new exposed facet (-201) was found to be stable, and the optoelectronic performance was greatly improved through the effective removal of defects by PEC etching.
APPLIED SURFACE SCIENCE
(2021)
Article
Crystallography
Maolin Zhang, Lei Wang, Kemeng Yang, Jiafei Yao, Weihua Tang, Yufeng Guo
Summary: The on-state properties and breakdown characteristics of the gallium oxide-on-silicon carbide metal-oxide-semiconductor field-effect transistor (MOSFET) were investigated using the technology computer-aided design (TCAD) approach. Compared to a full gallium oxide MOSFET, the lattice temperature of the gallium oxide-on-silicon carbide MOSFET was reduced by almost 100°C due to the high thermal conductivity of silicon carbide. However, an unoptimized gallium oxide-on-silicon carbide MOSFET showed a breakdown voltage degradation of over 40%. By optimizing the device structure, the breakdown voltage degradation of the gallium oxide-on-silicon carbide MOSFET was significantly reduced.
Review
Physics, Applied
Zeng Liu, Weihua Tang
Summary: This article discusses the recent progress of Ga2O3-based Schottky photodiodes and provides suggestions for Schottky metal selection, interfacial barrier modulation, space electric field adjustment, energy band engineering, and improvement of photodetection performance, aiming to promote the further development of deep-ultraviolet photodetection in the near future.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Optics
Chaoquan Hu, Zijian Zhou, Xiaoyu Zhang, Kaiyu Guo, Can Cui, Yuankai Li, Zhiqing Gu, Wei Zhang, Liang Shen, Jiaqi Zhu
Summary: The challenge in designing far-infrared transparent conductors (FIRTC) is to achieve both high plasma absorption edge (λp) and high conductivity (o). This paper breaks the trade-off between high conductivity and plasma absorption edge by increasing the neglected constant εopt, and successfully develops the material family of FIRTC with εopt > 15 and λp > 15 μm. These FIRTC materials are mainly octahedrally-coordinated heavy-metal chalcogenides and their solid solutions with shallow-level defects, which exhibit a high εopt due to the formation of electron-deficiency multicenter bonds resulting in the great electron-polarization effect. The development of FIRTC opens up new possibilities for far-infrared optoelectronics.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Article
Engineering, Electrical & Electronic
Shuang-Shuang Li, Ming-Yuan Yan, Fang-Yuan Fan, Wei-Qi Dong, Fu-Sheng Luo, Shu-Juan Zhang, Ying Zhang, Lei Chen, Jian-Min Yan, Shan-Tao Zhang, Fei-Fei Wang, Ren-Kui Zheng
Summary: Rare-earth ion doping improves the crystallinity and electrical performance of RxBa1-xSnO3 films. A rule is discovered that the resistivity and metal-semiconductor transition temperature increase with the atomic number of rare-earth ions. Among the four rare-earth ion dopings, La-doping is the most effective approach.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Crystallography
Zhiheng Huang, Shuren Zhou, Lingrui Chen, Qiqi Zheng, Honglin Li, Yuanqiang Xiong, Lijuan Ye, Chunyang Kong, Siqiang Fan, Hong Zhang, Wanjun Li
Summary: In this study, a high-response solar-blind UV photodetector was fabricated using a novel transparent electrode material, which exhibited high responsivity and excellent detectivity. The potential of transparent photodetector array in solar-blind imaging was also explored.
Article
Engineering, Electrical & Electronic
Shunli Wang, Chao Wu, Fengmin Wu, Fabi Zhang, Aiping Liu, Nie Zhao, Daoyou Guo
Summary: Wearable photodetectors have attracted great attention for their potential applications in smart monitoring, and self-powered technology is the future trend. This study successfully constructed an Ag NWs/a-GaO Schottky junction, demonstrating a DUV photodetector with excellent photoelectric performance and mechanical properties.
SENSORS AND ACTUATORS A-PHYSICAL
(2021)
Article
Energy & Fuels
Takashi Koida, Takuya Matsui, Hitoshi Sai
Summary: This study explores the possibility of using amorphous SnO2 as a substitute for In2O3-based transparent conductive oxides (TCOs) in silicon heterojunction (SHJ) solar cells. The research demonstrates that the a-SnO2 thin films have good conductivity, high transparency, and excellent damp heat stability. When applied in SHJ solar cells, the a-SnO2 layer shows no negative effect on the performance compared to indium tin oxide layers. This suggests that a-SnO2 has the potential to be a cost-effective and sustainable alternative to conventional In2O3-based TCOs.
Article
Physics, Applied
Mei Cui, Yang Xu, Xinyu Sun, Zhengpeng Wang, Hehe Gong, Xuanhu Chen, Tiancheng Hu, Yijun Zhang, Fang-fang Ren, Shulin Gu, Jiandong Ye, Rong Zhang
Summary: In this study, Ga2O3 solar blind photodetectors with different metal-semiconductor contact configurations were constructed and their performance was compared. The Ti/Ga2O3/Ti device operated in a photoconductive mode with high responsivity and rejection ratio, but exhibited sub-gap response and high dark current. The Ni/Ga2O3/Ni device operated in a mixed photovoltaic and photoconductive mode with decent photoresponsivity, high rejection ratio, and eliminated slow photoresponse.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Wenrui Zhang, Wei Wang, Jinfu Zhang, Tan Zhang, Li Chen, Yu Zhang, Yanwei Cao, Li Ji, Jichun Ye
Summary: By establishing a low-defect diffusion barrier, the responsivity and response time of ε-Ga2O3 MSM photodetectors were improved simultaneously.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Crystallography
Nikolay Abrosimov, Vladimir N. Kurlov, Robert Schewski, Jan Winkler
CRYSTAL RESEARCH AND TECHNOLOGY
(2020)
Article
Physics, Applied
Melanie Budde, Thilo Remmele, Carsten Tschammer, Johannes Feldl, Philipp Franz, Jonas Laehnemann, Zongzhe Cheng, Michael Hanke, Manfred Ramsteiner, Martin Albrecht, Oliver Bierwagen
JOURNAL OF APPLIED PHYSICS
(2020)
Article
Crystallography
Zbigniew Galazka, Klaus Irmscher, Robert Schewski, Isabelle M. Hanke, Mike Pietsch, Steffen Ganschow, Detlef Klimm, Andrea Dittmar, Andreas Fiedler, Thomas Schroeder, Matthias Bickermann
JOURNAL OF CRYSTAL GROWTH
(2020)
Article
Physics, Applied
S. Bin Anooz, R. Grueneberg, C. Wouters, R. Schewski, M. Albrecht, A. Fiedler, K. Irmscher, Z. Galazka, W. Miller, G. Wagner, J. Schwarzkopf, A. Popp
APPLIED PHYSICS LETTERS
(2020)
Article
Engineering, Electrical & Electronic
K. Dadzis, R. Menzel, U. Juda, K. Irmscher, C. Kranert, M. Mueller, M. Ehrl, R. Weingaertner, C. Reimann, N. Abrosimov, H. Riemann
JOURNAL OF ELECTRONIC MATERIALS
(2020)
Editorial Material
Nanoscience & Nanotechnology
C. Wouters, R. Schewski, M. Albrecht
Article
Materials Science, Multidisciplinary
T. Schulz, L. Lymperakis, M. Anikeeva, M. Siekacz, P. Wolny, T. Markurt, M. Albrecht
PHYSICAL REVIEW MATERIALS
(2020)
Article
Physics, Applied
Anna Hassa, Charlotte Wouters, Max Kneiss, Daniel Splith, Chris Sturm, Holger von Wenckstern, Martin Albrecht, Michael Lorenz, Marius Grundmann
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2020)
Article
Nanoscience & Nanotechnology
F. Brunner, L. Cancellara, S. Hagedorn, M. Albrecht, M. Weyers
Article
Materials Science, Multidisciplinary
C. Wouters, C. Sutton, L. M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht
PHYSICAL REVIEW MATERIALS
(2020)
Article
Physics, Applied
Leonardo Cancellara, Toni Markurt, Tobias Schulz, Martin Albrecht, Sylvia Hagedorn, Sebastian Walde, Markus Weyers, Shun Washiyama, Ramon Collazo, Zlatko Sitar
Summary: This study investigates the recovery process of epitaxial AlN films on sapphire at high temperatures. It reveals a temperature-dependent increase in oxygen content and proposes a lateral outdiffusion hypothesis to explain the observed oxygen concentration plateaus. Additionally, it concludes that the di-oxygen/aluminum vacancy complex (V-Al-2O(N)) plays a key role in controlling the annealing process.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
L. Cancellara, S. Hagedorn, S. Walde, D. Jaeger, M. Albrecht
Summary: The structural recovery of AlN grown on a sapphire substrate during high-temperature annealing is studied. The as-grown film shows high-density planar defects and nanopipes, which have a significant influence on the structural recovery.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Alexandra Papadogianni, Charlotte Wouters, Robert Schewski, Johannes Feldl, Jonas Lahnemann, Takahiro Nagata, Elias Kluth, Martin Feneberg, Rudiger Goldhahn, Manfred Ramsteiner, Martin Albrecht, Oliver Bierwagen
Summary: In this study, single-crystalline bixbyite (In1-xGax)(2)O-3 films were grown on (111)-oriented yttria-stabilized zirconia substrates using plasma-assisted molecular beam epitaxy. The addition of a pure In2O3 buffer layer between the substrate and (In1-xGax)(2)O-3 alloy improved the film surface smoothness and crystallinity. The distribution of Ga cations in the films was found to be non-uniform, with high Ga density inclusions observed at higher Ga content. The cubic bixbyite phase was preserved in both the matrix and the inclusions.
PHYSICAL REVIEW MATERIALS
(2022)
Article
Physics, Applied
V. Bonito Oliva, D. Mangelinck, S. Hagedorn, H. Bracht, K. Irmscher, C. Hartmann, P. Vennegues, M. Albrecht
Summary: In this study, the diffusion of Si donors in AlN is investigated. The experiments show that Si diffusion in AlN is mediated by singly negatively charged dopant-vacancy pairs SiAlVAl-. The strong concentration dependence of Si diffusion can be attributed to the electric field associated with the incorporation of Si donors on substitutional Al lattice sites.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Wahib Aggoune, Alberto Eljarrat, Dmitrii Nabok, Klaus Irmscher, Martina Zupancic, Zbigniew Galazka, Martin Albrecht, Christoph Koch, Claudia Draxl
Summary: The perovskite barium stannate (BaSnO3) shows promise for electronic applications due to its transparency and high room-temperature mobility. A combined theoretical and experimental study provides a consistent picture of its electronic structure and optical excitations.
COMMUNICATIONS MATERIALS
(2022)
