期刊
MICROSCOPY AND MICROANALYSIS
卷 16, 期 5, 页码 604-613出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1017/S1431927610000292
关键词
scanning transmission electron microscopy; low energy; Monte Carlo simulations; quantitative composition analysis; thickness determination; InGaAs heterostructures
资金
- DFG Research Center for Functional Nanostructures (CFN)
- DFG [Ge 841/20]
- Ministry of Science, Research and the Arts of Baden-Wurttemberg [Az: 7713.14-300]
High-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) images of electron-transparent samples show dominant atomic number (Z-) contrast with a high lateral resolution. HAADF STEM at low electron energies < 30 keV is applied in this work for quantitative composition analyses of InGaAs quantum wells. To determine the local composition, normalized experimental image intensities are compared with results of Monte Carlo simulations. For verification of the technique, InGaAs/GaAs quantum-well structures with known In concentration are used. Transmission electron microscopy samples with known thickness are prepared by the focused-ion-beam technique. The method can be extended to other material systems and is particularly promising for the analysis of materials that are sensitive toward knock-on damage.
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