Article
Nanoscience & Nanotechnology
Obert Golim, Vesa Vuorinen, Glenn Ross, Tobias Wernicke, Marta Pawlak, Nikhilendu Tiwary, Mervi Paulasto-Krockel
Summary: In this study, a low-temperature wafer-level bonding process using the Cu-Sn-In ternary system and Si wafers with microbumps was carried out at 150 degrees C. Thermodynamic and microstructural analysis showed that this bonding process could achieve high bonding quality with adequate mechanical strength.
SCRIPTA MATERIALIA
(2023)
Article
Engineering, Manufacturing
Vesa Vuorinen, Glenn Ross, Anton Klami, Hongqun Dong, Mervi Paulasto-Krockel, Tobias Wernicke, Anneliese Poenninger
Summary: The study demonstrates the use of the Cu-In-Sn ternary system for low-temperature solid liquid interdiffusion (SLID) bonding. Through optimized processes, high strength bonds with low defect content can be achieved at a bonding temperature as low as 170 degrees C. The bonding temperature significantly affects the phase structure and number of defects, with lower temperatures resulting in purer interconnection structures. The bonding quality has a clear impact on the interconnection strength.
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
(2022)
Article
Chemistry, Analytical
Taehyun Kim, Sangwug Han, Jubum Lee, Yeeun Na, Joontaek Jung, Yun Chang Park, Jaesub Oh, Chungmo Yang, Hee Yeoun Kim
Summary: This research proposes a low-temperature wafer-level vacuum packaging technology based on Cu-Sn bonding and nano-multilayer getter materials for microbolometers. The optimized Cu/Cu3Sn/Cu microstructure is achieved by adjusting the bonding temperature, pressure, and time. The Zr-Ti-Ru based nanomultilayer getter coating with high step height is improved by self-aligned shadow masking. The packaged samples show a narrow distribution of vacuum level near 50 mTorr.
Article
Physics, Multidisciplinary
Xueru Li, Junqiang Wang, Mengwei Li, Wen Hou
Summary: In this paper, Cu/Sn/Cu solid-state diffusion (SSD) under low temperature is proposed and investigated. The feasibility of using Cu/Sn/Cu SSD for low-temperature, short-time, wafer-level bonding is demonstrated. The average bonding shear strength reached 27.0 MPa and the parabolic growth constant of Cu3Sn reached 1.86 x 10(-15) m(2)/s.
Article
Engineering, Electrical & Electronic
Shizhao Wang, Hehui Zhang, Zhiqiang Tian, Tianjian Liu, Yameng Sun, Yuexin Zhang, Fang Dong, Sheng Liu
Summary: This study focuses on the effect of Cu protrusion on the reliability of HBM fabricated by W2W-HB process. Different manufacturing and service conditions greatly affect the microstructure and deformation behavior of TSV, and thermal stress induced by CTE mismatch could seriously deteriorate device performance. A new process and FEA model were proposed to understand and address the key issues in HBM W2W-HB stacking process.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Analytical
Muhammad Salman Al Farisi, Takashiro Tsukamoto, Shuji Tanaka
Summary: This study demonstrates a heterogeneous integration wafer bonding technique using an electroplated aluminum bonding frame. The bonding mechanism relies on the mechanical deformation of the electroplated aluminum bonding frame through localized bonding pressure, resulting in a high-quality bonding strength.
Article
Chemistry, Analytical
Sylwester Bargiel, Julien Cogan, Samuel Queste, Stefania Oliveri, Ludovic Gauthier-Manuel, Marina Raschetti, Olivier Leroy, Stephan Beurthey, Mathieu Perrin-Terrin
Summary: Silicon-based microchannel technology offers excellent cooling performance for silicon pixel detectors in high-energy physics. This study evaluated two alternative bonding methods, and found that Au-Au thermocompression bonding had higher pressure resistance and better bond quality for application in high-energy physics.
Article
Chemistry, Physical
Ali Roshanghias, Jochen Bardong, Alfred Binder
Summary: This study proposes and investigates a new method for using jet printing of glass frit materials at the wafer level. The jetting parameters were optimized and the effect of jetted pitch size on bond-line thickness was assessed. The results reveal that jet printing of glass frit is a straightforward, cost-effective, and flexible approach with significant implications for hermetic packaging.
Article
Engineering, Electrical & Electronic
V. Vuorinen, H. Dong, G. Ross, J. Hotchkiss, J. Kaaos, M. Paulasto-Krockel
Summary: The study found that low-temperature Cu-In-Sn SLID bonding can reduce the temperature and lower global residual stresses. However, the effects of dissolved In on the physical properties of Cu-Sn intermetallics still need further research, and the microstructure of Cu-In-Sn SLID bonding is extremely stable, exhibiting partially metastable structures that do not significantly evolve during thermal annealing.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Yan Wen Tsau, Joke De Messemaeker, Abdellah Salahouelhadj, Mario Gonzalez, Liesbeth Witters, Boyao Zhang, Marc Seefeldt, Eric Beyne, Ingrid De Wolf
Summary: Wafer-to-wafer Cu hybrid bonding relies on non-elastic Cu-pad expansion for permanent Cu-Cu pad bonding. Understanding and predicting the mechanism and amount of Cu expansion is crucial for defining polishing specifications and process window. Simulation studies show that primary creep is not the dominant mechanism for Cu expansion in wafer-to-wafer hybrid bonding.
MICROELECTRONICS RELIABILITY
(2022)
Article
Engineering, Electrical & Electronic
Jiahui Yao, Chao Cheng, Han Xue, Xingyu Li, Yulan Lu, Bo Xie, Junbo Wang, Deyong Chen, Jian Chen
Summary: This article presents a high-sensitivity resonant differential pressure microsensor based on wafer-level eutectic bonding. The microsensor includes dual resonators embedded in the pressure-sensitive diaphragm and a silicon cap to form a vacuum cavity. Differential pressures cause deflections of the diaphragm and result in shifts in resonant frequencies. The microsensor exhibits excellent performance with a differential pressure sensitivity of 181.53 Hz/kPa and a maximum fitting error of less than 80 Pa.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Review
Materials Science, Multidisciplinary
Hung-Che Liu, Shih-Chi Yang, Jia-Juen Ong, Dinh-Phuc Tran, A. M. Gusak, K. N. Tu, Chih Chen
Summary: In this study, Cu joints with highly (111)-oriented nano-twinned structure were fabricated at 250 degrees C. A new characterization approach using plan-view images of focused ion beam was reported to observe the evolution of interfacial voids in the Cu joints under annealing. The distribution function of interfacial voids and the kinetics of void evolution were then studied and analyzed. The evolution of interfacial voids was proposed to occur at different stages, which were dominant by plastic deformation, creep deformation, and void ripening caused by grain boundary and lattice diffusion.
MATERIALS CHARACTERIZATION
(2022)
Article
Physics, Multidisciplinary
Paolo Conci, Giovanni Darbo, Andrea Gaudiello, Claudia Gemme, Stefano Girardi, Alessandro Lapertosa, Francesca Mattedi, Alessio Volpe
Summary: The paper discusses the application of pixel technology in High Energy Physics detectors and a possible solution for producing sensitive areas through Wafer Level Packaging. It also explores the technical requirements for reconstructed wafers and strategies for improvement.
FRONTIERS IN PHYSICS
(2021)
Article
Chemistry, Physical
Zhong-Jie Hong, Demin Liu, Han-Wen Hu, Chih- Cho, Ming-Wei Weng, Jui-Han Liu, Kuan-Neng Chen
Summary: This research investigated the bonding mechanism of low-temperature Cu-Cu thermal compression bonding (TCB) with passivation layer and found that grain boundary diffusion of Cu leads to the formation of amorphous Cu at the bonding interface in the passivated-Cu structure. Through the diffusion of Cu atoms and recrystallization of amorphous Cu, voids at the bonding interface can be eliminated, resulting in high quality bonding results with low thermal budget.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Analytical
Wenting Zhang, Caorui Zhang, Junmin Wu, Fei Yang, Yunlai An, Fangjing Hu, Ji Fan
Summary: In this study, SiC direct bonding using O-2 plasma activation was investigated, showing a potential low-cost and efficient surface activation method. High bonding uniformity and strength were achieved through C-SAM scanning, with interface analysis revealing the formation of Si-O, C-O, and C-C bonds at the bonding interface through TEM and EDX.
Article
Engineering, Manufacturing
Demin Liu, Tsung-Yi Kuo, Yu-Wei Liu, Zhong-Jie Hong, Ying-Ting Chung, Tzu-Chieh Chou, Han-Wen Hu, Kuan-Neng Chen
Summary: The use of Pt as a metal passivation material enables low-temperature Cu-Cu direct bonding with good bonding surface and strength. Cu atoms diffuse through the passivation layer to form a new layer without pretreatment, making it suitable for 3-D integrated circuits and heterogeneous integration.
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Jun-Dao Luo, Yu-Ying Lai, Kuo-Yu Hsiang, Chia-Feng Wu, Hao-Tung Chung, Wei-Shuo Li, Chun-Yu Liao, Pin-Guang Chen, Kuan-Neng Chen, Min-Hung Lee, Huang-Chung Cheng
Summary: By modifying the O-2 plasma period in PE-ALD, the undoped-HfO2 FeFET demonstrates enhanced remnant polarization and successful integration.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Yi-Chieh Tsai, Chia-Hsuan Lee, Hsin-Chi Chang, Jui-Han Liu, Han-Wen Hu, Hiroyuki Ito, Young Suk Kim, Takayuki Ohba, Kuan-Neng Chen
Summary: The electrical characteristics and reliability of the wafer-on-wafer (WOW) bumpless through-silicon via (TSV) structure were investigated and a new lumped circuit model was proposed to simulate its performance. The 12-layer stacked bumpless TSV structure showed low transmission loss and excellent signal integrity. A complete reliability study revealed excellent electrical and mechanical properties, indicating great potential for 3-D integration.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Yi-Chieh Tsai, Yi-Cheng Huang, Yu-Ting Huang, Han-Wen Hu, Kuan-Neng Chen
Summary: Different combinations of metal thin films were investigated for metal interconnect in MEMS encapsulation, with Ti-Pd-Au structure identified as the most stable and sealing-efficient option. Various tests validated the bonding scheme with plasma treatment for reduced thermal budget and enhanced reliability against temperature variation and moisture, indicating great potential for advanced miniaturized MEMS packaging.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Manufacturing
Chia-Hsin Lee, Baron Huang, Jennifer See, Luke Prenger, Yu-Min Lin, Wei-Lan Chiu, Ou-Hsiang Lee, Kuan-Neng Chen
Summary: This article presents a thorough evaluation of four bondable laser release materials for RDL-first and die-first FOWLP, based on absorption coefficient, thermal stability, and pull-off adhesion. Through FIB inspection and die bonding test, it was demonstrated that a specific material achieved excellent packaging results at lower temperatures.
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Zhong-Jie Hong, Ming-Wei Weng, Chih-Han Chen, Mu-Ping Hsu, Han-Wen Hu, Tai-Yu Lin, Ying-Chan Hung, Kuan-Neng Chen
Summary: This study proposes a multi-chiplet integration scheme by utilizing Cu-Cu bonding with low thermal budget and an asymmetric passivation bonding structure. The single-sided passivation structure is achieved through one-sided heating thermal compression bonding at 150°C, enhancing bonding quality with a small grain size passivation layer. Transmission electron microscope analysis of the bonding interface of the single-sided passivation structure and its corresponding mechanism is inferred. Compared to the original passivation structures, the single-sided passivation structure not only enhances bonding quality but also provides higher bonding strength with lower contact resistance than Cu-Cu direct bonding, making it applicable for multi-chiplet integration.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Physical
Mu-Ping Hsu, Chi-Yu Chen, Hsin-Chi Chang, Zhong-Jie Hong, Ming-Wei Weng, Kuan-Neng Chen
Summary: The Cu-Cu bonding technology is crucial for heterogeneous integration and overcoming the limitations of transistor miniaturization. This study presents a next-generation passivation bonding technology that allows chips to be bonded at temperatures below 200°C, simplifying the complex process. The investigation of area-selective films and bonding mechanism using transmission electron microscope (TEM) reveals exceptional film quality and bonded reliability.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Hao-Tung Chung, Yu-Ming Pan, Nein-Chih Lin, Zhong-Jie Hong, Bo-Jheng Shih, Chih-Chao Yang, Chang-Hong Shen, Po-Tsang Huang, Huang-Chung Cheng, Kuan-Neng Chen, Chenming Hu
Summary: This letter proposes and demonstrates the growth of single-crystal Germanium (Ge) by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for monolithic three-dimensional integrated circuits (monolithic 3D ICs). The technique allows for the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. The ELLPE Ge FinFETs exhibit superior performance and uniformity compared to poly-Ge FinFETs, and the maximum temperature during the ELLPE technique is below 400 ?, enabling monolithic 3D integration of ICs.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Manufacturing
Chia-Hsin Lee, Chung-An Tan, Michelle Fowler, Ting-Yu Ko, Yu-Min Lin, Wei-Lan Chiu, Ou-Hsiang Lee, Kuan-Neng Chen
Summary: This article evaluates a negative-tone i-line photosensitive polymeric bonding material for low-temperature Cu/polymer hybrid bonding, which has suitable mechanical properties and chemical characteristics, opening up new possibilities for low-temperature Cu/polymer bonding.
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
(2023)
Review
Chemistry, Multidisciplinary
Yuan-Chiu Huang, Yu-Xian Lin, Chien-Kang Hsiung, Tzu-Heng Hung, Kuan-Neng Chen, Seiichi Miyazaki, King-Ning Tu
Summary: Advanced packaging technology is increasingly important in the semiconductor industry for its higher I/O density compared to conventional soldering technology. Cu-Cu bonding is preferred in advanced packaging due to its excellent electrical and thermal properties, but its high thermal budget caused by Cu oxidation poses challenges. Reducing the thermal budget and preventing Cu oxidation are important considerations in low-temperature hybrid bonding processes.
Article
Engineering, Electrical & Electronic
Hao-Tung Chung, Yu-Ming Pan, Nein-Chih Lin, Bo-Jheng Shih, Chih-Chao Yang, Chang-Hong Shen, Huang-Chung Cheng, Kuan-Neng Chen
Summary: This paper presents a method of fabricating p-type Germanium (Ge) tri-gate field-effect transistors (Tri-gate FETs) using green nanosecond laser crystallization (GNSLC) and counter doping (CD). The GNSLC process transforms the nano-crystalline-Ge (nc-Ge) into polycrystalline Ge (poly-Ge) with improved crystallinity. Further processes such as chemical-mechanical planarization (CMP) and CD are utilized to improve the performance of the Ge Tri-gate FETs. The resulting GNSLC Ge Tri-gate FETs exhibit better crystallinity and performance parameters such as threshold voltage (V-th), ION, and IOFF.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2023)
Article
Engineering, Manufacturing
Yu-Ting Huang, Yi-Chieh Tsai, Yi-Cheng Huang, Han-Wen Hu, Kuan-Neng Chen
Summary: In this article, a glass-based hermetic structure with a thickness thinner than 200 $\mu \text{m}$ and a size smaller than 1 mm2 is introduced, showing the potential for realizing the miniaturization of microelectromechanical systems (MEMS) with high throughput. The material selection of metal wire for the development of this new wafer-level packaging platform is studied. The technique of metal patterning on the cavity structure is demonstrated for the fabrication of seal ring and electrical connection simultaneously. Finally, the ultrathin hermetic structure is sealed by metal-to-metal bonding at wafer level. These technologies can be widely used in advanced miniaturized packaging applications for next-generation electronic components.
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Tzu-Heng Hung, Ping-Jung Liu, Chiao-Yen Wang, Tsai-Fu Chung, Kuan-Neng Chen
Summary: This study investigates the use of PVD-deposited Cu3N as a passivation material for Cu bonding. The decomposition of Cu3N and its bonding capabilities at low temperatures are explored. The results demonstrate successful Cu3N-Cu3N bonding and Cu bonding using Cu3N passivation.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2023)
Article
Engineering, Electrical & Electronic
Han-Wen Hu, Yu-Wei Huang, Yi-Chieh Tsai, Meng-Kai Shih, Kuan-Neng Chen
Summary: In this study, an advanced 2.3D solution is proposed to integrate RDL interposer and FR-4 substrate using hybrid soldering technique. The simulation and experimental results validate that this solution has great potential for high reliability 2.3D assembly without the need for underfill.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2022)
Article
Engineering, Electrical & Electronic
Demin Liu, Po-Chih Chen, Tzu-Chieh Chou, Han-Wen Hu, Kuan-Neng Chen
Summary: Fine pitch Cu/SiO2 hybrid bonding was successfully achieved at a low temperature of 120 degrees C using Au passivation method, showing stable electrical performance. This method exhibits excellent bonding quality, low thermal budget, and high reliability, making it highly feasible for 3D IC and heterogenous integration applications.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2021)
Article
Engineering, Electrical & Electronic
Zhiqiang Wang, Siyang Dai, Yao Zhao, Guofeng Li, Bing Ji, Volker Pickert, Bowen Gu, Shuai Ding
Summary: This paper proposes a lumped-charge model for IEGT single chip, considering the effect of carrier injection enhancement in the emitter. The parasitic inductance of the parallel branches in PP-IEGT is extracted using Ansys simulation, and the validity of Ansys simulation is verified. Furthermore, the switching inconsistency is evaluated by combining the electrical model and the effect of mutual inductance, and it is found that mutual inductance is an important factor influencing electrical parameter distribution.
MICROELECTRONICS RELIABILITY
(2024)
Article
Engineering, Electrical & Electronic
Sankha Subhra Ghosh, Surajit Chattopadhyay, Arabinda Das, Nageswara Rao Medikondu, Abdulkarem H. M. Almawgani, Adam R. H. Alhawari, Sudipta Das
Summary: This article describes a method for identifying the IGBT switch breakdown failure in a 3-phase, 3-level Voltage Source Converter linked to the photovoltaic grid. Comparative learning has been used to detect the specific parameter suitable for the detection of the failure.
MICROELECTRONICS RELIABILITY
(2024)
Article
Engineering, Electrical & Electronic
Milad Khajehvand, Henri Seppanen, Panthea Sepehrband
Summary: Using SEM/EDX analysis, microscale fracture at the bond-pad is detected during the wedge bonding process of Cu wire to a Cu or Al substrate. It is observed that the fracture of the bond leads to the formation of a bulge on the wire and a cavity in the substrate, causing fracture in the original substrate. 3D optical profiler reveals that the depth, radius, and surface area of the cavity increase with bond time for a constant bond force and power. These metrics are suggested as new factors for optimizing the wedge bonding process. The optimal bonding parameters should maximize the cavity's surface area (related to bond's pull force) while minimizing the cavity's depth relative to the substrate's thickness to avoid substrate damage. Furthermore, Molecular Dynamics simulations propose a potential plastic deformation mechanism for bond-pad damage, suggesting the benefits of using a small-grain-sized substrate, low transducer's vibration amplitude, and high transducer's frequency to minimize the cavity's depth.
MICROELECTRONICS RELIABILITY
(2024)
