An analytical approach for physical modeling of hot-carrier induced degradation

标题
An analytical approach for physical modeling of hot-carrier induced degradation
作者
关键词
-
出版物
MICROELECTRONICS RELIABILITY
Volume 51, Issue 9-11, Pages 1525-1529
出版商
Elsevier BV
发表日期
2011-08-15
DOI
10.1016/j.microrel.2011.07.089

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