Controlling of electrical and interface state density properties of ZnO:Co/p-silicon diode structures by compositional fraction of cobalt dopant

标题
Controlling of electrical and interface state density properties of ZnO:Co/p-silicon diode structures by compositional fraction of cobalt dopant
作者
关键词
-
出版物
MICROELECTRONICS RELIABILITY
Volume 51, Issue 12, Pages 2195-2199
出版商
Elsevier BV
发表日期
2011-06-26
DOI
10.1016/j.microrel.2011.05.013

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