Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte

标题
Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte
作者
关键词
-
出版物
MICROELECTRONICS RELIABILITY
Volume 50, Issue 5, Pages 643-646
出版商
Elsevier BV
发表日期
2010-02-21
DOI
10.1016/j.microrel.2010.01.022

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