Statistical insight into controlled forming and forming free stacks for HfOx RRAM

标题
Statistical insight into controlled forming and forming free stacks for HfOx RRAM
作者
关键词
-
出版物
MICROELECTRONIC ENGINEERING
Volume 109, Issue -, Pages 177-181
出版商
Elsevier BV
发表日期
2013-03-24
DOI
10.1016/j.mee.2013.03.065

向作者/读者发起求助以获取更多资源

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started