期刊
MICROELECTRONIC ENGINEERING
卷 86, 期 3, 页码 299-302出版社
ELSEVIER
DOI: 10.1016/j.mee.2008.10.008
关键词
High-k dielectric; Threshold voltage shift; AlN; Pulse
资金
- DST, Govt. of West Bengal
Potential of high-k dielectric films for future scaled charge storage non-volatile memory (NVM) device applications is discussed. To overcome the problems of charge loss encountered in conventional flash memories with silicon-nitride (Si3N4) films and polysilicon-oxide-nitride-oxide-silicon (SONOS) and nonuniformity issues in nanocrystal memories (NC), such as Si, Ge and metal, it is shown that the use of high-k dielectrics allows more aggressive scaling of the tunnel dielectric, smaller operating voltage, better endurance, and faster program/erase speeds. Charge-trapping characteristics of high-k AlN films with SiO2 as a blocking oxide in p-Si/SiO2/AlN/SiO2/poly-silicon (SCHOS) memory structures have been investigated in detail. The experimental results of program/erase characteristics obtained as the functions of gate bias voltage and pulse width are presented. (C) 2008 Elsevier B.V. All rights reserved.
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