期刊
MICROELECTRONIC ENGINEERING
卷 85, 期 5-6, 页码 1413-1416出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2007.12.014
关键词
carbon nanotube; electron beam lithography; AFM; nanodevice simulation
We report on the specialised characterization of the local electron beam irradiation of carbon nanotube (CNT) based devices motivated by previous studies on device electrical characteristics. In particular, Kelvin probe force microscopy provides surface potential description of the device under exposure. The experimental characterization is complemented with 3-dimensional electric field modelling of the devices using finite element methods. The modelling includes the effect of electron charging and AFM tip potential. Comparison of simulation and experiments shows good agreement and contributes to assess the distortion of electrical characteristics of CNT based devices under electron beam irradiation. (c) 2007 Elsevier B.V. All rights reserved.
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