Effects of atomic layer deposition temperatures on structural and electrical properties of ZnO films and its thin film transistors

Organic-inorganic thin film transistors (OITFTs) with Al/ZnO/PVP structure on Si substrate were fabricated and studied as to their structural and electrical properties. PVP (poly-4-vinylphenol) organic gate insulator was coated on Si substrate by spin coating method. The ZnO was deposited as an active layer by using the atomic layer deposition (ALD) method on PVP/Si substrate at various temperatures ranging from 80 to 140 A degrees C. The structural and electrical properties of ZnO thin films were analyzed by X-ray diffraction and by hall-effect measurement system for optimum process of the OITFT. The grain size and carrier concentration of ZnO films increased, and the resistivity decreased as the deposition temperature increased from 80 to 140 A degrees C. The field effect mobility, on/off current ratio and threshold voltage of OITFTs with ZnO active layer deposited at 100 A degrees C were found to be 0.37 cm(2)/V center dot s, 5x10(2) and 5 V, respectively.