期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 17, 期 -, 页码 134-137出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2013.09.001
关键词
Silicon; Ion implantation; Selenium supersaturation; Metallic conduction
类别
资金
- National Natural Science Foundation of China [61275040, 60976046, 61021003]
- Major State Basic Research Development Program of China (973 Program) [2012CB934200]
- Chinese Academy of Sciences [Y072051002]
Hall measurements at 80-300 K are performed on crystalline silicon doped with selenium exceeding the equilibrium solid solubility limit using ion implantation combined with furnace annealing. The temperature dependence of free carrier density and sheet conductivity of the Se doping layer changes with implantation dose. Metallic conduction behavior is well observed in the sample doped with selenium to be 7.4 x 10(20)/cm(3). The overlapping between Se impurity states below Si conduction band might give a microscopic explanation. (C) 2013 Elsevier Ltd. All rights reserved.
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