期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 26, 期 -, 页码 137-143出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2014.04.022
关键词
Bismuth; p-type doping; ZnS; ZnSe; Nano particle
The paper compares the properties of bismuth doped ZnS and ZnSe films obtained by two different doping techniques: (i) The sandwiching technique, in which two layers of dopant material are sandwiched between chalcogenide material and (ii) nano-particle incorporation technique in which chalcogenide layer is deposited on top of a layer of bismuth nano particles. The carrier concentration, mobility etc. were found by Hall effect measurements. The ease and effectiveness of the two doping techniques have been evaluated. (C) 2014 Elsevier Ltd. All rights reserved.
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