Article
Chemistry, Physical
Lukasz Janicki, Ryszard Korbutowicz, Mariusz Rudzinski, Piotr Michalowski, Sebastian Zlotnik, Milosz Grodzicki, Sandeep Gorantla, Jaroslaw Serafinczuk, Detlef Hommel, Robert Kudrawiec
Summary: This study comprehensively investigates the structural and optical properties of GaN subjected to three oxidation modes. The results reveal that all modes lead to the growth of beta-phase Ga2O3, but they differ in surface morphology, growth rate, and oxygen diffusion behavior. Only the vapor oxidation process does not degrade the material underneath the oxide layer.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Junting Chen, Junlei Zhao, Sirui Feng, Li Zhang, Yan Cheng, Hang Liao, Zheyang Zheng, Xiaolong Chen, Zhen Gao, Kevin J. J. Chen, Mengyuan Hua
Summary: In this study, the GaN surface is converted into a GaON epitaxial nanolayer through a two-step oxidation-reconfiguration process, overcoming the vulnerability of the GaN surface and enhancing the stability and reliability of GaN-based devices. The GaON nanolayer derived from GaN possesses advantages such as a wide bandgap, high thermodynamic stability, and large valence band offset with a GaN substrate, which can be further utilized to improve the performance of GaN-based devices in various applications.
ADVANCED MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Zifeng Ni, Shikun Zheng, Guomei Chen, Qiang Fan, Xin Zhang, Haitao Zhang, Junjie Li, Da Bian, Shanhua Qian
Summary: To achieve high material removal rate (MRR) and good surface quality, the electro-Fenton reaction was utilized to assist chemical mechanical polishing (CMP) for GaN substrate. The analysis using fluorospectrophotometry, potentiodynamic polarization method, and X-ray photoelectron spectroscopy (XPS) revealed that the electro-Fenton solution had strong corrosion characteristics and accelerated the formation of gallium oxide (Ga2O3) on the wafer surface. A high MRR of 274.45 nm h(-1) with a surface roughness (Ra) of 0.88 nm was obtained using the electro-Fenton solution. The electric field increased the conversion rate of Fe2+ and Fe3+ ions, promoted the decomposition of H2O2, and enhanced the oxidation reaction on the GaN wafer surface.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2023)
Article
Chemistry, Physical
Tong Su, Bohan Xiao, Zikang Ai, Lingjie Bao, Wencheng Chen, Yuheng Shen, Qijin Cheng, Kostya (Ken) Ostrikov
Summary: Most high-performance 8-Ga2O3 thin films are currently grown using expensive techniques such as molecular beam epitaxy, metal-organic chemical vapor deposition, and pulsed laser deposition. A custom-made plasma-enhanced chemical vapor deposition method is designed to achieve fast and cost-effective growth of 8-Ga2O3 thin films. The plasma-enhanced thermal oxidation process results in higher growth rates and improved film quality compared to traditional thermal oxidation methods.
APPLIED SURFACE SCIENCE
(2023)
Article
Nanoscience & Nanotechnology
Yiwen Song, Praneeth Ranga, Yingying Zhang, Zixuan Feng, Hsien-Lien Huang, Marco D. Santia, Stefan C. Badescu, C. Ulises Gonzalez-Valle, Carlos Perez, Kevin Fern, Robert M. Lavelle, David W. Snyder, Brianna A. Klein, Julia Deitz, Albert G. Baca, Jon-Paul Maria, Bladimir Ramos-Alvarado, Jinwoo Hwang, Hongping Zhao, Xiaojia Wang, Sriram Krishnamoorthy, Brian M. Foley, Sukwon Choi
Summary: This study investigates the thermal conductivity of heteroepitaxial beta-Ga2O3 films, and finds that the thermal conductivity is strongly influenced by film thickness, crystallinity, and substrate offcut angles. Additionally, the thermal conductivity of ((2) over bar 01)-oriented beta-(AlxGal)(2)O-3 thin films grown via MOVPE was characterized, with results showing lower conductivity due to phonon-alloy disorder scattering. These findings provide fundamental insights for the development of beta-Ga2O3 electronic and optoelectronic devices.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Nanoscience & Nanotechnology
Zhe (A. ) Jian, Kai Sun, Stefan Kosanovic, Christopher J. Clymore, Umesh Mishra, Elaheh Ahmadi
Summary: Wafer bonding of β-Ga2O3 and N-polar GaN single crystal substrates, achieved by adding ZnO as a glue interlayer, resulted in fully bonded wafers without Newton rings. Temperature-dependent current-voltage measurements revealed the impact of post-annealing temperature on the electrical and structural characteristics of the bonded samples. Annealing the bonded wafers at 1100°C in N-2,N- environment consistently produced ohmic-like characteristics, attributed to the crystallization of ZnO and diffusion of Ga into ZnO. This work demonstrates promising wafer bonding of β-Ga2O3 and GaN, with potential applications in high-frequency and high-power devices.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Jinyuan Xu, Ailing Chen, Linfeng Yu, Donghai Wei, Qikun Tian, Huimin Wang, Zhenzhen Qin, Guangzhao Qin
Summary: In this paper, the stable structure of a monolayer CuI with ultra-low thermal conductivity and an ultra-wide direct bandgap is predicted from first-principles calculations. This material shows potential applications in transparent and wearable electronics.
Article
Chemistry, Physical
Chun-Lin Su, Kogularasu Sakthivel, Yu-Tsun Yao, Po-Hsun Liao, Ming-Lun Lee, Jinn-Kong Sheu
Summary: This article discusses a new method to improve the water-splitting efficiency of gallium nitride photoelectrodes using alkali-treated NiOx films. The study shows that NiOOH formed on the NiOx/n-GaN surface can act as an electrocatalyst to promote carrier transportation kinetics on GaN photoanodes. By using this method, the photocurrent density is increased, and a significant H-2 production rate is achieved.
ACS APPLIED ENERGY MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Bryan T. Spann, Joel C. Weber, Matt D. Brubaker, Todd E. Harvey, Lina Yang, Hossein Honarvar, Chia-Nien Tsai, Andrew C. Treglia, Minhyea Lee, Mahmoud I. Hussein, Kris A. Bertness
Summary: With the combination of nanopillars and membranes, the thermal conductivity of thermoelectric materials has been significantly reduced while the electrical conductivity remains unaffected, achieving decoupling of thermoelectric properties. This finding paves the way for high-efficiency solid-state energy recovery and cooling.
ADVANCED MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Sufen Wei, Yi Liu, Qianqian Shi, Tinglin He, Feng Shi, Ming-kwei Lee, Choongik Kim
Summary: Nitrogen-doped p-type β-Ga2O3 films with enhanced conductivity were fabricated through the thermal oxidation of GaN in a N2O atmosphere. The results showed that nitrogen doping played a significant role in determining p-type electrical properties and the thermal oxidation of GaN in a N2O atmosphere was more efficient.
Article
Engineering, Electrical & Electronic
Florian Wilhelmi, Yuji Komatsu, Shinya Yamaguchi, Yuki Uchida, Tadashi Kase, Shinji Kunori, Andreas Lindemann
Summary: This article evaluates different assembly strategies for Gallium oxide (Ga2O3) Schottky diodes and discusses the influence of substrate thickness, on-resistance, and assembly method on the power and current rating of the diodes. It also shows that optimizing the die attach thickness or using underfill materials in a specific configuration can reduce the average junction temperature and local temperature peaks.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Physics, Multidisciplinary
Bin Wei, Qingan Cai, Qiyang Sun, Yaokun Su, Ayman H. Said, Douglas L. Abernathy, Jiawang Hong, Chen Li
Summary: By measuring the Matryoshka phonon dispersions, insights into the anisotropic thermal conductivity of semiconducting alpha-GaN have been gained, showing how phonon topology affects thermal transport in the material. This study demonstrates the importance of understanding lattice dynamics for effective thermal management in electronic devices.
COMMUNICATIONS PHYSICS
(2021)
Review
Crystallography
Wannian Fang, Qiang Li, Jiaxing Li, Yuxuan Li, Qifan Zhang, Ransheng Chen, Mingdi Wang, Feng Yun, Tao Wang
Summary: The application of deep ultraviolet detection (DUV) in military and civil fields has gained increasing attention from researchers. Inorganic materials are widely used in DUV detection due to their good stability and controllable growth, compared to the complex molecular structure and poor stability of organic materials. Rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the development of high-performance DUV photodetectors with different geometries, overcoming disadvantages in traditional detectors. This article provides a brief introduction to the development history and types of DUV detectors, and comprehensively summarizes and reviews typical UWBG detection materials and their methods of preparation, as well as their research and application status, including III-nitride semiconductors, gallium oxide, diamond, etc. Additionally, problems related to DUV detection materials, such as material growth, device performance, and future development, are discussed.
Article
Materials Science, Multidisciplinary
B. Bommalingaiah, Narayan Gaonkar, R. G. Vaidya
Summary: Theoretical investigation of macroscopic polarization effects on lattice thermal conductivity of GaN reveals significant impact of polarization fields on thermal conductivity, especially from high frequency transverse mode phonons. Numerical calculations show good agreement with experimental reports for thermal conductivity of different dimension samples with and without polarization fields.
Article
Materials Science, Multidisciplinary
Yi Liu, Sufen Wei, Chan Shan, Mingjie Zhao, Shui-Yang Lien, Ming-kwei Lee
Summary: A remarkable improvement in the conductivity and crystalline quality of grown nitrogen-doped p-type beta-Ga2O3 films was achieved by thermal oxidation of GaN in N2O ambient. The resulting two-layer structure, with a top layer composed of nanorods and a bottom compact layer, can be applied to photocatalysts and high-performance photodetectors or electronic devices.
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
(2022)
Article
Nanoscience & Nanotechnology
Michael Raj Marks, Kuan Yew Cheong, Zainuriah Hassan
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
(2019)
Article
Engineering, Electrical & Electronic
Z. X. Lim, I. A. Tayeb, Z. A. A. Hamid, M. F. Ain, A. M. Hashim, J. M. Abdullah, F. Zhao, K. Y. Cheong
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2019)
Article
Materials Science, Multidisciplinary
Thanh Tam Tran, Zuratul Ain Abdul Hamid, Ngoc Thien Lai, Kuan Yew Cheong, Mitsugu Todo
JOURNAL OF MATERIALS SCIENCE
(2020)
Article
Materials Science, Multidisciplinary
Michael Raj Marks, Foo Khong Yong, Kuan Yew Cheong, Zainuriah Hassan
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2020)
Article
Engineering, Electrical & Electronic
Binghao Wang, Kuan Yew Cheong, Chih-Fang Huang, Feng Zhao
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
(2020)
Article
Materials Science, Multidisciplinary
Aleksey A. Sivkov, Yuan Xing, Kuan Yew Cheong, Xiangqun Zeng, Feng Zhao
Article
Engineering, Manufacturing
Michael Raj Marks, Kuan Yew Cheong, Zainuriah Hassan
Summary: This study systematically investigated the impact of femtosecond laser dicing on the fracture strength and sidewall microstructure of 20 μm Si dies with 0-30 μm Cu backside layer. The results showed that Si dies with Cu backside layer had higher backside characteristic fracture strength but lower frontside characteristic fracture strength compared to those without Cu backside layer. Fractographic and microstructural analyses were conducted to understand the fracture initiation behavior and effects on fracture strength. Recommendations for improving the fracture strengths were made based on observed microstructural features.
JOURNAL OF MANUFACTURING PROCESSES
(2021)
Article
Engineering, Electrical & Electronic
Aleksey A. Sivkov, Yuan Xing, Zoe Minden, Zhigang Xiao, Kuan Yew Cheong, Feng Zhao
Summary: The resistive switching properties of nanoscale ZrO2 thin films deposited by PE-ALD were investigated, demonstrating bipolar resistive switching characteristics with promising parameters for memory applications. The study also presented a SPICE model to simulate the device behavior, showing good agreement with experimental data and confirming the potential of PE-ALD ZrO2 for non-volatile resistive random access memories.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Nurul Hidayah Mohamad Idris, Jayalakshmi Rajakumar, Kuan Yew Cheong, Brendan J. Kennedy, Teruhisa Ohno, Akira Yamakata, Hooi Ling Lee
Summary: The fabrication of a TiO2/PVA/cork floating photocatalyst resulted in the efficient degradation of methylene blue, with superior performance under visible light irradiation. The presence of TiO2 nanoparticles on the cork surface was confirmed through various analyses, and the photocatalyst demonstrated good reusability even after multiple cycles. The photocatalytic activity was mainly controlled by superoxide radical (O-center dot(2)-) reactive oxygen species, highlighting its potential application in wastewater treatment.
Article
Chemistry, Physical
Lai Fan Choong, Kuan Yew Cheong, Sivakumar Ramakrishnan, Ahmad Faiz Roslan
Summary: The strong adhesion between epoxy and silicone is crucial for optoelectronic packaging and can be enhanced by microwave plasma treatment. Epoxy treated with 300 W plasma exhibited the highest shear strength, with factors contributing to the improvement identified.
APPLIED SURFACE SCIENCE
(2021)
Review
Engineering, Multidisciplinary
Michael Raj Marks, Kuan Yew Cheong, Zainuriah Hassan
Summary: This article reviews the physics of laser-material interaction in Si wafer dicing, discussing the effects of laser settings, dicing parameters, and material factors on ablation rate and quality, as well as approaches to improve cutting methods.
PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY
(2022)
Review
Chemistry, Multidisciplinary
Kuan Yew Cheong, Ilias Ait Tayeb, Feng Zhao, Jafri Malin Abdullah
Summary: Bio-organic material, a sustainable and bio-resorbable material, is used as an active thin film in producing resistive switching random access memory (RRAM). The memory characteristics of this nonvolatile memory are significantly affected by the resistive-switching mechanism. Studies have identified three types of mechanisms in governing the operation of bio-organic-based RRAM: electronic, electrochemical, and thermo-chemical.
NANOTECHNOLOGY REVIEWS
(2021)
Article
Materials Science, Multidisciplinary
Ilias A. Tayeb, Feng Zhao, Jafri M. Abdullah, Kuan Y. Cheong
Summary: The study demonstrates the potential of polymannose as a candidate material for environmentally friendly resistive-switching random access memory, showing competitive resistive switching characteristics with a READ window of 2.2 V. The optimal drying time of 7 hours provided high ON/OFF ratio and acceptable endurance cycles.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Proceedings Paper
Chemistry, Multidisciplinary
T. T. Tam, M. Todo, K. Y. Cheong, Z. A. Abdul Hamid
3RD INTERNATIONAL POSTGRADUATE CONFERENCE ON MATERIALS, MINERALS & POLYMER (MAMIP) 2019
(2020)
Article
Materials Science, Multidisciplinary
Z. X. Lim, I. A. Tayeb, Z. A. A. Hamid, M. F. Ain, A. M. Hashim, J. M. Abdullah, A. A. Sivkov, F. Zhao, K. Y. Cheong
Article
Engineering, Electrical & Electronic
Nishi Mehak, Bindu Rani, Aadil Fayaz Wani, Shakeel Ahmad Khandy, Ajay Singh Verma, Atif Mossad Ali, M. A. Sayed, Shobhna Dhiman, Kulwinder Kaur
Summary: In this study, the electronic, structural, and thermoelectric properties of newly designed layered rare-earth metal germanide halides were investigated. The materials showed promising thermoelectric performance, making them suitable candidates for energy harvesting in thermoelectric applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M. S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, Kashinath A. Bogle
Summary: This study presents the design and fabrication of a high-performance blue light photodetector using an n-type cadmium sulfide (CdS) thin film and a p-type polyaniline (PANI). The photodetector demonstrates exceptional performance characteristics, including high responsivity, detectivity, and sensitivity, along with rapid response time and rectification behavior. The research represents a significant advancement in the field of high-performance photodetectors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Da Hu, Jiabin Lu, Qiusheng Yan, Yingrong Luo, Ziyuan Luo
Summary: This study introduces a chemical mechanical polishing technique based on metal electrochemical corrosion for single-crystal SiC to address the environmental pollution caused by the polishing solution in chemical mechanical polishing. Wear experiments were conducted to investigate the wear properties of SiC C-surface under different grinding ball materials and solutions. The proposed mechanism of material removal in single-crystal SiC via metal electrochemical corrosion was discussed.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Lifang Mei, Long Lin, Dongbing Yan, Yu Liang, Yu Wu, Shuixuan Chen
Summary: This paper investigates the removal of CuO particles from silicon wafer surfaces using a picosecond laser. Numerical calculations and experimental research were conducted, and a thermal-stress coupled finite element model was established. The results show that as the laser energy density increases, the removal rate of CuO particles initially increases and then decreases, while the roughness of the silicon substrate decreases and then increases.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Summary: In this study, we demonstrated the low-temperature growth of a Ge layer on a Co-based Heusler alloy via Sn doping, which improved the magnetic properties and spin signal.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Xiang-Long Wei, Bao-Feng Shan, Zong-Yan Zhao
Summary: This study synthesized and characterized a CuAlO2/CuGaO2 heterostructure and evaluated its photocatalytic performance. The heterostructure exhibited superior performance compared to individual CuAlO2 and CuGaO2 photocatalysts, with increased carrier concentration, enhanced redox capabilities, superior electrochemical stability, and reduced interfacial resistance. Photocatalytic experiments demonstrated the remarkable oxidation potential and notable reduction activity of the heterostructure, outperforming CuAlO2 and CuGaO2 in degradation rates and hydrogen production rates, respectively. These findings highlight the superior performance and broad applicability of the CuAlO2/CuGaO2 heterostructure in various photocatalytic reactions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude De Jaeger, Yvon Cordier
Summary: This study investigates the AlN nucleation layer issue in GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. It is shown that using 3C-SiC as an intermediate layer can significantly decrease RF propagation losses. Measurements and analyses demonstrate that dopant diffusion into the 3C-SiC pseudo-substrate is confined beneath the interface, and a slightly conductive zone is present beneath the AlN/3C-SiC interface, explaining the low propagation losses obtained for the devices. This work highlights the importance and efficiency of the 3C-SiC intermediate layer as a pseudo-substrate.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuang Wang, Lijun Wu, Zhiqing Wang, Ziyue Qian
Summary: The geometric structure and electrical properties of zigzag and armchair DWSiNT perfect tubes with different Stone-Wales defects were simulated using the SCC-DFTB method. It was found that the atomic arrangement, stability, energy gap, and charge distribution strongly depend on the type of tube. The effects of strong and weak electric fields on the tubes were also investigated, showing different impact on stability and energy gap. These findings have implications for future experimental studies.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Nanda Kumar Reddy Nallabala, Sunil Singh Kushvaha, Sambasivam Sangaraju, Venkata Krishnaiah Kummara
Summary: This study focuses on the preparation and performance of MIS-type high-k dielectric oxide-based UV photodetectors. The researchers found that the Au/Ta2O5/GaN devices prepared on Ta2O5/GaN heterojunction with post-annealing exhibited improved photoresponsivity, EQE, and rise/fall times. This improvement is attributed to the optimized band configuration of the Ta2O5/GaN heterostructure and the effect of post-annealing on photogenerated charge carriers.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Jean-Francois Michaud, Marc Portail, Daniel Alquier, Dominique Certon, Isabelle Dufour
Summary: This paper reviews the use of MEMS devices without sensitive layers in gas detection applications. These devices can measure a physical property of the gas to determine its concentration, and have the advantages of generality and high detection limits.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Kanyu Yang, Chaojie Shi, Ruizhao Tian, Haoyue Deng, Jie He, Yangyang Qi, Zhengchun Yang, Jinshi Zhao, Zhen Fan, Jun Liu
Summary: This study investigates the electrical and synaptic properties of Ag/TiO2 nanorod/FTO-based RRAM devices, focusing on the impact of different seed layer thicknesses on nanorod thickness and RRAM performance. The devices show remarkable achievements in terms of endurance, self-compliance, and resistance switching ratio. The switching mechanism is attributed to space-charge-limited conduction resulting from electron trapping in oxygen vacancy traps. The devices also maintain stable synaptic properties even after undergoing multiple cycles of long-term potentiation and depression.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Karthickraj Muthuramalingam, Wei-Chih Wang
Summary: This study presents a non-destructive approach using terahertz time-domain spectroscopy (THz-TDS) to estimate the electrical properties of semi-insulating compound semiconductors. The study successfully measures the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers using THz-TDS in transmission mode. The simplified Drude model and the Nelder-Mead algorithm are employed to estimate the electrical properties, and the results are in accordance with the manufacturer specifications. The feasibility of non-destructive mapping of the electrical properties is demonstrated, offering a promising tomographic inspection approach for online monitoring.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Pengfei Wei, Rui Tong, Xiaofeng Liu, Yao Wei, Yongan Zhang, Xu Liu, Jian Dai, Haipeng Yin, Dongming Liu
Summary: This study investigates the influence of SiNx and SiOxNy as rear-side passivation films on the performance of PERC+ cells. SiNx film is found to have better passivation performance and resistance to aluminum paste erosion, while SiOxNy film exhibits better optical performance. By designing multi-layer SiNx/SiOxNy/SiNx stacks, the cells' efficiency and bifaciality are significantly improved.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuangting Ruan, Xiaolan Li, Wen Cui, Zhihui Zhang, Zhihui Xu, Huanqi Cao, Shougen Yin, Shishuai Sun
Summary: Integrating photosensitive electrode materials can effectively improve the low temperature tolerance and enhance energy density and power density. The surface morphology reconstruction technique can increase the active surface area and improve electrolyte contact, leading to higher specific capacity. Additionally, the electrodes demonstrate excellent photoelectric and photothermal conversion abilities, allowing the supercapacitor to maintain high energy density even at low temperatures.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Review
Engineering, Electrical & Electronic
Ashmalina Rahman, James Robert Jennings, Mohammad Mansoob Khan
Summary: This review provides a comprehensive overview of the synthesis and applications of nanostructured CuInS2 in photocatalytic applications. Various strategies, including the introduction of dopants, surface decoration, and heterojunction formation, have been summarized to improve the photocatalytic performance of CuInS2. However, scientific challenges such as the high carrier recombination rate limit the broad application of CuInS2.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
