期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 16, 期 2, 页码 467-471出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2012.07.009
关键词
Semiconductors nanoparticles; Optical absorption; Band gap; Photoluminescence properties
类别
资金
- MHRD, Government of India
In the present study, the optical properties of ZnS and cobalt (Co) doped ZnS nanoparticles were investigated at room temperature. ZnS and ZnS:Co nanophosphors were prepared through chemical route, namely the chemical precipitation method and the formation of the nanoparticles were confirmed by X-ray diffraction and field emission scanning electron microscope (FESEM). Band gap energy of the prepared samples is determined by using a UV-vis-NIR spectrophotometer. The photoluminescence property of ZnS and ZnS:Co sample is determined by fluorescence spectroscopy. The sizes of as prepared nanoparticles are found to be in the 8-9 nm range. The FESEM morphology shows the formation of nanostructure of ZnS samples. The value of optical band gap has been found to be in the range 4.30-4.03 eV. Room temperature photoluminescence (PL) spectrum of the undoped sample exhibits emission in the blue region with multiple peaks under UV excitation. On the other hand, Co2+ doped ZnS samples show enhanced visible light emissions under the same UV excitation wavelength of 310 nm. (C) 2012 Elsevier Ltd. All rights reserved.
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