Cellulose nanecrystals thin films as gate dielectric for flexible organic field-effect transistors

We report on the fabrication of flexible field-effect transistor using poly[N-9 ''-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] as active channel and cellulose nanocrystals (CNC) as gate dielectric on indium tin-oxide coated polyethyleneterephthalate substrate. The use of CNC as gate dielectric material was found favorable for carrier transport at the semiconductor/dielectric interface with the device showing an on-off ratio of approximate to 10(4). These results indicate that CNC is a promising gate dielectric layer for flexible organic field effect transistors. (C) 2014 Elsevier B.V. All rights reserved.