Low cost zinc oxide for memristors with high On-Off ratios

Commercially available zinc oxide (ZnO) nanoparticles were used to produce spin-coated thin films on fluorine-doped tin oxide (FTO) coated glass slides. X-Ray diffraction patterns of films annealed at 500 degrees C show the formation of polycrystalline hexagonal wurtzite structure. A red-shift of 0.03 eV was observed for optical bandgap on annealing. The On-Off ratio as high as 2.2 x 10(4) was recorded for the ZnO memristor in a sandwich configuration with sputtered gold top electrode. (C) 2014 Elsevier B.V. All rights reserved.