期刊
MATERIALS LETTERS
卷 115, 期 -, 页码 212-214出版社
ELSEVIER
DOI: 10.1016/j.matlet.2013.10.065
关键词
Luminescence; NanocomPosites; Semiconductors
资金
- Scientific Research Foundation of North China University of Technology (NCUT)
- Natural Science Foundation of Beijing
This study reports a direct synthesis of AlN nanowires via the reaction of aluminum powder and nitrogen gas at around 800 degrees C without catalyst. The as-prepared AlN nanowires were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). The product consists of wurtzite AlN nanowires with diameter of tens of nanometer. The cathodoluminescence (CL) measurements show that the luminescence intensities of the as-prepared AlN nanowires are more than 5 times stronger than that of the commercial AlN powder, which is attributed to the nitrogen vacancies and oxygen-related defects in the nanowires. 2013 Elsevier B.V. All rights reserved.
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