期刊
MATERIALS LETTERS
卷 100, 期 -, 页码 237-240出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2013.03.036
关键词
Semiconductors; Luminescence; ZnS; Doping; Chemical bath deposition
资金
- Hunan Provincial Natural Science Foundation of China [12JJ3009]
- Science and Technology Plan Projects of Hunan Province [2012ZK3021]
- NSF of Shannxi Province [2011JM1004]
- Fundamental Research Funds for Central Universities [xjj2011001]
High-quality ultraviolet (UV) emission materials are essential for making short-wavelength light-emitting diodes and diode lasers. We report here that efficient ultraviolet luminescence at room-temperature can be obtained in ZnS nanospheres synthesized with an economical and simple chemical bath deposition method. The homogeneity, crystallinity and size of cubic ZnS nanospheres lead to a narrow and strong UV emission centered at 345 nm. Interestingly, Co doping dramatically enhances the near band edge UV emission and suppress the deep-level (DL) emission due to the improvement of crystallinity and the decrease of the DL defects. This work suggests that Co-doped ZnS is a promising candidate for ultraviolet functional material. (C) 2013 Elsevier B.V. All rights reserved.
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