期刊
MATERIALS LETTERS
卷 63, 期 1, 页码 72-74出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2008.09.004
关键词
boron rich semiconductors; doping; heterojunction diodes; boron carbide
资金
- Office of Naval Research [N00014-06-1-0616]
- National Science Foundations [NSF-ECS 0725881]
- Chief Technical Officer, Intelligence Technology Innovation Center of the United States Intelligence Community
- Nebraska Research Initiative
- Louisiana Board of Regents
The introduction metallocenes, in particular ferrocene (Fe(eta(5)-C(5)H(5))(2)), cobaltocene (Co(eta(5)-C(5)H(5))(2)), and nickelocene (Ni(eta(5)-C(5)H(5))(2)), together with the carborane source molecule closo-1,2-dicarbadodecaborane, during plasma enhanced chemical vapor deposition, will result in the transition metal doping of semiconducting boron carbides. Here we report using ferrocene to introduce Fe dopants, and a semiconducting boron-carbide homojunction has been fabricated. The diode characteristics are very similar to those fabricated with Co and Ni doping. (C) 2008 Elsevier B.V. All rights reserved.
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