期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 27, 期 6, 页码 2702-2706出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.3250204
关键词
focused ion beam technology; helium ions; ion beam lithography; ion microscopes; nanolithography; nanopatterning; optical transfer function; organic compounds; proximity effect (lithography); resists
资金
- NSF GRFP
- NSF NNIN
- NRI/INDEX
A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to perform lithography similar to, but of potentially higher resolution than, scanning electron-beam lithography. This article describes the control of this microscope for lithography via beam steering/blanking electronics and evaluates the high-resolution performance of scanning helium-ion-beam lithography. The authors found that sub-10 nm-half-pitch patterning is feasible. They also measured a point-spread function that indicates a reduction in the micrometer-range proximity effect typical in electron-beam lithography.
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