期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 27, 期 4, 页码 1897-1900出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.3159784
关键词
electrical resistivity; Hall effect; II-VI semiconductors; pulsed laser deposition; secondary ion mass spectra; semiconductor doping; semiconductor thin films; wide band gap semiconductors; zinc compounds
资金
- National Basic Research Program of China [2006CB604906]
N-doped, Li-doped, and Li-N doped Zn0.89Mg0.11O thin films have been prepared by pulsed laser deposition. Hall-effect measurements indicate that the doping technique plays an important role in the p-type behavior of ZnMgO. Li doping produces high-resistivity p-type ZnMgO films, whereas N doping produces ZnMgO films with indeterminate carrier type. In contrast, Li-N codoping results in low resistivity and stable p-type ZnMgO films. The enhancement by Li and N coincorporation is investigated by secondary ion mass spectroscopy and is possibly responsible for the good p-type conduction in Li-N dual-acceptor doped Zn0.89Mg0.11O.
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