4.2 Article

Solid-phase growth mechanism of tungsten oxide nanowires synthesized on sputtered tungsten film

期刊

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 26, 期 6, 页码 1942-1947

出版社

A V S AMER INST PHYSICS
DOI: 10.1116/1.2990783

关键词

amorphous state; annealing; nanowires; transmission electron microscopy; tungsten compounds; X-ray diffraction

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The authors have proposed a solid-phase growth mechanism of tungsten oxide nanowires synthesized on sputtered tungsten films. Transmission electron microscopy observation, x-ray diffraction analyses, and some ex situ experiments were performed to verify the growth model. The nanowire nuclei are generated at irregular points on the W surface. An amorphous oxidized layer is formed on the W surface by annealing, and tungsten oxide molecules migrate on the W surface into the nuclei, thus contributing to the nanowire growth.

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