期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 26, 期 5, 页码 1696-1699出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.2968706
关键词
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资金
- Global Research Laboratory (GRL)
- Hynix 2008
- Hanyang University [HYU-2006-I]
High quality nitrogen doped ZnO films were fabricated on glass substrates by allowing nitrogen atoms from a pregrown tungsten nitride (WN) to be activated and diffused into a pure ZnO film during an in situ post-thermal annealing process. The N doped ZnO film exhibited reproducible electrical properties including a Hall concentration of 3.69x10(18) cm(-3), a mobility of 1.35 cm(2)/V-s , and a resistivity of 10 Omega cm at room temperature, along with corresponding structural results. Further investigation using ZnO p-n homojunctions, which displayed good I-V characteristics with a turn-on voltage of about 3 V, demonstrated that the p-type ZnO growth process can simply form p-type ZnO:N. (C) 2008 American Vacuum Society.
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