Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM

(2014)   IEEE ELECTRON DEVICE LETTERS

Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices

(2013) R. K. Pandey et al.   JOURNAL OF APPLIED PHYSICS

The behaviour of oxygen at metal electrodes in HfO2 based resistive switching devices

(2013) Samuel R. Bradley et al.   MICROELECTRONIC ENGINEERING

Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

(2012) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS