Article
Engineering, Manufacturing
Zhenyu Zhang, Jie Liu, Wei Hu, Lezhen Zhang, Wenxiang Xie, Longxing Liao
Summary: The novel green CMP technique effectively reduces the surface roughness of sapphire, achieving lower material removal rates and processing times, providing new perspectives for the semiconductor and microelectronic industries.
JOURNAL OF MANUFACTURING PROCESSES
(2021)
Article
Chemistry, Physical
Wei Liu, Song Yuan, Xiaoguang Guo
Summary: The present study investigates the discrepancy between densified area (DA) and non-densified area (NDA) in fused glass during the chemical mechanical polishing (CMP) process using ReaxFF molecular dynamics (MD) simulations. The results reveal the atomic-scale densification damage mechanism and provide new insights for fused glass densification studies.
APPLIED SURFACE SCIENCE
(2022)
Article
Engineering, Mechanical
Song Yuan, Xiaoguang Guo, Ming Li, Zhuji Jin, Dongming Guo
Summary: Oxidants play a crucial role in the final surface quality and removal rate during CMP. This study presents a new polishing slurry based on Fenton reaction, achieving high quality and efficiency removal of diamond.
TRIBOLOGY INTERNATIONAL
(2022)
Article
Engineering, Mechanical
Seungchul Hong, Deoksu Han, Keon-Soo Jang
Summary: The study focused on improving the planarization performance of dielectric layers by adjusting the zeta potential of particles and using surfactants, achieving a balance between performance and wafer defect density. High-quality wafer surfaces with rare defects, low roughness, and no contamination were achieved by tailoring the surface potential of colloidal silica nanoparticles and reducing defect concentration using fluorinated surfactant-induced intermolecular repulsion.
Article
Engineering, Mechanical
Max Schneckenburger, Rui Almeida, Sven Hoefler, Rainer Boerret
Summary: This paper investigates the issue of slurry erosion in glass polishing and discusses the influence of conventional polishing nozzles.
Review
Chemistry, Analytical
Chi-Hsiang Hsieh, Che-Yuan Chang, Yi-Kai Hsiao, Chao-Chang A. Chen, Chang-Ching Tu, Hao-Chung Kuo
Summary: Chemical mechanical polishing (CMP) is a technology that can produce globally planarized surfaces without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between surface oxidation and oxide layer removal. Improving oxidation efficiency and integrating hybrid energies are key to enhancing CMP efficiency.
Article
Materials Science, Multidisciplinary
Fan Xu, Weilei Wang, Aoxue Xu, Daohuan Feng, Weili Liu, Zhitang Song
Summary: The effects of particle size and pH of SiO2-based slurry on chemical mechanical polishing for SiO2 film were investigated. It was found that particle size and pH had significant impacts on removal rates and surface roughness. The main polishing mechanism involved providing activation energy for mechanical erasure, and pH affected the particle size and Zeta potential, thereby influencing the strength of mechanical and chemical action.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2022)
Article
Engineering, Chemical
Eungchul Kim, Jaewon Lee, Younghun Park, Cheolmin Shin, Jichul Yang, Taesung Kim
Summary: The shape of fumed silica aggregates has an impact on CMP performance, with different proportions of linear and spheroidal aggregates affecting the outcome. The distribution and quantity of contact bumps from bumpy abrasives can explain the results of CMP, and a mixture of spherical and non-spherical abrasives in specific ratios can improve CMP performance.
Article
Materials Science, Multidisciplinary
Yan Zhou, Haimei Luo, Gaopan Chen, Guihai Luo, Liyan Pan, Guoshun Pan
Summary: A method for improving the removal efficiency and surface quality of SiC wafers through photocatalysis-assisted chemical mechanical polishing has been developed, and it has been demonstrated that the addition of SiO2@TiO2 composite nanoparticles in the slurry is more effective for surface polishing.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Bin Chen, Chuanjun Liu, Lingpu Ge, Liang Shang, Hao Guo, Kenshi Hayashi
Summary: Gold nano-urchins (AuNUs) were synthesized and deposited on indium tin oxide (ITO) glass in this study. The study compared the influence of the resistance of ITO glass and the deposition density of NUs on refractive index sensitivity (RIS) of these ITO substrates. It was found that ITO glass with a resistance of 8-12 /sq and substrates with many AuNU dimers gave the highest RIS. Additionally, the study proposed the use of AuNU substrate for heparin detection through Au etching, achieving a linear range of 0.05 to 5 μg/mL with a detection limit of 8 ng/mL.
IEEE SENSORS JOURNAL
(2022)
Article
Chemistry, Physical
Zifeng Zhao, Zhenyu Zhang, Chunjing Shi, Junyuan Feng, Xuye Zhuang, Li Li, Fanning Meng, Haodong Li, Zihang Xue, Dongdong Liu
Summary: Quartz glass has excellent physicochemical properties and is widely used in modern high technology. Traditional polishing slurry, which often contains strong acid, strong alkali, and corrosive additives, causes environmental pollution and damages the parts. To address these issues, a novel quartz glass polishing slurry was developed using cerium oxide, Lanthanum oxyfluoride, potassium pyrophosphate, sodium N-lauroyl sarcosinate, and sodium polyacrylate. The slurry showed improved suspension stability and resulted in a smoother sample surface with a lower surface roughness and higher material removal rate compared to the current industry standard.
Article
Engineering, Electrical & Electronic
Jaewon Lee, Eungchul Kim, Chulwoo Bae, Hyunho Seok, Jinil Cho, Kubra Aydin, Taesung Kim
Summary: In this study, the surface of ceria was reduced by contact with hydrogen gas in a high temperature isothermal environment, resulting in the formation of surface hydroxyls. These hydroxyls then desorbed to form H2O and oxygen vacancies. The reduction reaction caused a change in the crystal structure, leading to a color change in ceria from yellow to blue. The reducing ability of hydrogen gas increased by 12.7% under isothermal conditions at 1000 degrees C, and the material removal rate (MRR) of reduced ceria improved by up to 37.7% compared to the original ceria.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Biochemical Research Methods
Weiyang Yang, Yan Gong, Cheng-You Yao, Maheshwar Shrestha, Yaoyao Jia, Zhen Qiu, Qi Hua Fan, Arthur Weber, Wen Li
Summary: Integrative neural interfaces combining neurophysiology, optogenetics, and neural imaging offer opportunities for studying neural circuits in the brain. The development of ultra-flexible, highly conductive and fully transparent microscale electrocorticogram (mu ECoG) electrode arrays with PEDOT:PSS-ITO-Ag-ITO assembly shows enhanced mechanical flexibility, robustness, and resilience to photon-induced artifacts. In vivo experiments demonstrate successful recording of light-evoked ECoG oscillations from the primary visual cortex (V1) of an anesthetized rat.
Article
Chemistry, Physical
Wantang Wang, Baoguo Zhang, Yunhui Shi, Jiakai Zhou, Ru Wang, Nengyuan Zeng
Summary: The study combines mixed abrasive slurry (MAS) with photocatalytic effect in the SiC-CMP process to achieve efficient enhanced CMP technology. By using MAS consisting of Al2O3 and ZrO2 abrasives, a high material removal rate and surface roughness can be obtained under UV irradiation.
APPLIED SURFACE SCIENCE
(2022)
Article
Materials Science, Multidisciplinary
Aoxue Xu, Fan Xu, Weilei Wang, Weili Liu, Zhitang Song
Summary: The study demonstrates that diethanolamine (DEA) can effectively inhibit the removal rate of cobalt and reduce surface scratches during chemical mechanical polishing. The inhibition types of DEA are mainly physical and chemical adsorption. Additionally, XPS analysis shows that DEA forms a water-insoluble Co-DEA complex by complexing cobalt ions.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
