Quantitative Calculation of Oxygen Incorporation in Sputtered IGZO Films and the Impact on Transistor Properties

Effect of oxygen partial pressure on the Fermi level of ZnO1−x films fabricated by pulsed laser deposition

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Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors

(2009) Tze-Ching Fung et al.   JOURNAL OF APPLIED PHYSICS

Novel ZrInZnO Thin-film Transistor with Excellent Stability

(2008) Jin-Seong Park et al.   ADVANCED MATERIALS

Threshold Voltage Control of Amorphous Gallium Indium Zinc Oxide TFTs by Suppressing Back-Channel Current

(2008) Kyoung-Seok Son et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

(2008) Jang Yeon Kwon et al.   IEEE ELECTRON DEVICE LETTERS

Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors

(2008) Hai Q. Chiang et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

Stable room temperature deposited amorphous InGaZnO[sub 4] thin film transistors

(2008) Wantae Lim et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Amorphous oxide channel TFTs

(2007) Hideya Kumomi et al.   THIN SOLID FILMS