Dielectric Tunable Properties and Relaxor Behavior of (Pb0.5Ba0.5)ZrO3 Thin Films

Pb0.5Ba0.5ZrO3 (PBZ50) thin films with a thickness of about 500 nm in the paraelectric-phase were deposited on Pt/Ti/SiO2/Si substrates via the sol-gel process. The room-temperature dielectric measurements showed that the tunability and figure of merit (FOM) of the PBZ50 films at the maximum external DC field of 200 kV/cm were 39% and 38%, respectively. The results of temperature-dependent dielectric measurements confirmed that PBZ50 films had a typical diffuse phase transition characteristic and relaxor behavior.