Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
出版年份 2015 全文链接
标题
Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 106, Issue 20, Pages 203505
出版商
AIP Publishing
发表日期
2015-05-22
DOI
10.1063/1.4921308
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