Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
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Title
Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 20, Pages 203505
Publisher
AIP Publishing
Online
2015-05-22
DOI
10.1063/1.4921308
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