Neutral anodic etching of GaN for vertical or crystallographic alignment

标题
Neutral anodic etching of GaN for vertical or crystallographic alignment
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 106, Issue 24, Pages 241603
出版商
AIP Publishing
发表日期
2015-06-20
DOI
10.1063/1.4922702

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