Raman spectroscopy of electrochemically gated graphene transistors: Geometrical capacitance, electron-phonon, electron-electron, and electron-defect scattering

标题
Raman spectroscopy of electrochemically gated graphene transistors: Geometrical capacitance, electron-phonon, electron-electron, and electron-defect scattering
作者
关键词
-
出版物
PHYSICAL REVIEW B
Volume 91, Issue 20, Pages -
出版商
American Physical Society (APS)
发表日期
2015-05-12
DOI
10.1103/physrevb.91.205413

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More