Pressure and electric field-induced metallization in the phase-engineered ZrX2 (X = S, Se, Te) bilayers

Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides

(2014) Saptarshi Das et al.   ACS Nano

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(2014) Pere Miró et al.   CHEMICAL SOCIETY REVIEWS

Nanoscale Transition Metal Dichalcogenides: Structures, Properties, and Applications

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Tuning Electronic and Magnetic Properties of Early Transition-Metal Dichalcogenides via Tensile Strain

(2014) Hongyan Guo et al.   Journal of Physical Chemistry C

Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

(2014) Claudia Ruppert et al.   NANO LETTERS

Covalent functionalization of monolayered transition metal dichalcogenides by phase engineering

(2014) Damien Voiry et al.   Nature Chemistry

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Pressure-Induced Metallization of Molybdenum Disulfide

(2014) Zhen-Hua Chi et al.   PHYSICAL REVIEW LETTERS

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

(2014) Avinash P. Nayak et al.   Nature Communications

Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers

(2014) Karel-Alexander N. Duerloo et al.   Nature Communications

The New Skinny in Two-Dimensional Nanomaterials

(2013) Kristie J. Koski et al.   ACS Nano

Graphene-Like Two-Dimensional Materials

(2013) Mingsheng Xu et al.   CHEMICAL REVIEWS

Electronic transport and dielectric properties of low-dimensional structures of layered transition metal dichalcogenides

(2013) Ashok Kumar et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Semiconductor to metal transition in bilayer transition metals dichalcogenidesMX2(M= Mo, W;X= S, Se, Te)

(2013) Ashok Kumar et al.   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2

(2013) Keliang He et al.   NANO LETTERS

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

(2013) Manish Chhowalla et al.   Nature Chemistry

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

(2013) Yi Zhang et al.   Nature Nanotechnology

Mechanical strain dependent electronic and dielectric properties of two-dimensional honeycomb structures of MoX2 (X=S, Se, Te)

(2013) Ashok Kumar et al.   PHYSICA B-CONDENSED MATTER

Orbital analysis of electronic structure and phonon dispersion in MoS2, MoSe2, WS2, and WSe2monolayers under strain

(2013) Chung-Huai Chang et al.   PHYSICAL REVIEW B

Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations

(2013) Yan Li et al.   RSC Advances

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(2013) Xiufeng Song et al.   Journal of Materials Chemistry C

Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

(2012) A. Kumar et al.   EUROPEAN PHYSICAL JOURNAL B

Effect of quantum confinement on electronic and dielectric properties of niobium dichalcogenides NbX2 (X=S, Se, Te)

(2012) Ashok Kumar et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation

(2012) Qihang Liu et al.   Journal of Physical Chemistry C

Tunable dielectric response of transition metals dichalcogenides MX2 (M=Mo, W; X=S, Se, Te): Effect of quantum confinement

(2012) Ashok Kumar et al.   PHYSICA B-CONDENSED MATTER

Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides

(2012) Swastibrata Bhattacharyya et al.   PHYSICAL REVIEW B

Structural and electronic properties of ZrX2 and HfX2 (X = S and Se) from first principles calculations

(2011) Hong Jiang   JOURNAL OF CHEMICAL PHYSICS

Transition-metal dioxides: A case for the intersite term in Hubbard-model functionals

(2011) Heather J. Kulik et al.   JOURNAL OF CHEMICAL PHYSICS

Tunable band gaps in bilayer transition-metal dichalcogenides

(2011) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Scaling law of the giant Stark effect in boron nitride nanoribbons and nanotubes

(2008) Fawei Zheng et al.   PHYSICAL REVIEW B