Effects of Deposition Power and Oxygen Partial Pressure on Low-Temperature-Processed In-Ga-Zn-O Thin-Film Transistors

标题
Effects of Deposition Power and Oxygen Partial Pressure on Low-Temperature-Processed In-Ga-Zn-O Thin-Film Transistors
作者
关键词
-
出版物
Journal of Nanoelectronics and Optoelectronics
Volume 6, Issue 3, Pages 283-287
出版商
American Scientific Publishers
发表日期
2011-09-20
DOI
10.1166/jno.2011.1169

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