Three-dimensional observation of defects in nitrogen-doped 6H-SiC crystals using a laser scanning confocal microscope

Formation and suppression of misoriented grains in 6H-SiC crystals

(2011) Shenghuang Lin et al.   CRYSTENGCOMM

Restraint of nucleation of SiC polycrystals surrounding the seed during SiC single crystal growth

(2011) Pei Yun Dai et al.   JOURNAL OF MATERIALS SCIENCE

Investigation of micropipe defect terminating during SiC crystal growth

(2010) S. H. Lin et al.   MATERIALS SCIENCE AND TECHNOLOGY

Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers

(2009) N. Zhang et al.   APPLIED PHYSICS LETTERS

Identification of SiC polytypes by etched Si-face morphology

(2009) Ying Yang et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography

(2008) I. Kamata et al.   JOURNAL OF CRYSTAL GROWTH

Synthesis and characterization of high surface area silicon carbide by dynamic vacuum carbothermal reduction

(2008) Ying Zheng et al.   JOURNAL OF MATERIALS SCIENCE