☆ 4.4 Article Proceedings Paper

Growth and characterizations of nonpolar [11-20] ZnO on [100] (La,Sr)(Al,Ta)O3 substrate by chemical vapor deposition

JOURNAL OF CRYSTAL GROWTH (2010)

期刊

JOURNAL OF CRYSTAL GROWTH

卷 312, 期 8, 页码 1170-1174

出版社

ELSEVIER

DOI: 10.1016/j.jcrysgro.2009.12.006

关键词

Czochralski method; Chemical vapor deposition processes; Oxides; Semiconducting II-VI materials

类别

Crystallography Materials Science, Multidisciplinary Physics, Applied

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摘要

Nonpolar a-plane ZnO film with [1 1 - 2 0] orientation was grown on a nearly lattice-matched [1 0 0] (La-0.3,Sr-0.7)(Al-0.65,Ta-0.35)O-3 (LSAT) substrate from a simple chemical vapor deposition method. LSAT single crystal was grown by the Czochralski method. The dependence of growth characteristics on the growth temperatures and reactor's pressures was investigated. The surface morphologies of ZnO films were studied by a scanning electron microscope. The sample orientations were identified by X-ray diffraction pattern and transmission electron microscope. Optical properties examined by room temperature photoluminescence spectra exhibit a strong near-band-edge emission peak at 378.6 nm and a negligible green band. (C) 2009 Elsevier B.V. All rights reserved.

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Effect of growth temperature of NH3-MBE grown GaN-on-Si layers on donor concentration and leakage currents

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Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.

JOURNAL OF CRYSTAL GROWTH (2024)

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Article Crystallography

Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater

Thi-Hoai-Thu Nguyen, Jyh-Chen Chen

Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.

JOURNAL OF CRYSTAL GROWTH (2024)

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Article Crystallography

Contributions to the development of crystal growth technologies

Peter Rudolph

Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.

JOURNAL OF CRYSTAL GROWTH (2024)

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